Low-Voltage, Low rON, Dual DPDT Analog Switch

DESCRIPTION The DG3015 is a dual double-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed, low on-resistance and small physical size, the DG3015 is ideal for portable and battery powered applications requirin

Low-Voltage, Low RON, Dual DPDT Analog Switch

FEATURES • Low Voltage Operation (2.7 V to 3.3 V) • Low On-Resistance - RON: 0.8 Ω • 3 dB Loss at 100 MHz • Fast Switching: tON = 40 ns tOFF = 35 ns • MICRO FOOT® Package • Compliant to RoHS Directive 2002/95/EC BENEFITS • Reduced Power Consumption • High Accuracy • Reduce Board Space

Low-Voltage, Low RON, Dual DPDT Analog Switch

Low-Voltage, Low RON, Dual DPDT Analog Switch

FEATURES • Low Voltage Operation (2.7 V to 3.3 V) • Low On-Resistance - RON: 0.8 Ω • 3 dB Loss at 100 MHz • Fast Switching: tON = 40 ns tOFF = 35 ns • MICRO FOOT® Package • Compliant to RoHS Directive 2002/95/EC BENEFITS • Reduced Power Consumption • High Accuracy • Reduce Board Space

Device Orientation-MICRO FOOT Packages

Device Orientation Options for Analog ICs MICRO FOOT
4X4: 0.5-mm PITCH, 0.238-mm BUMP HEIGHT

Low-Voltage, Low rON, Dual DPDT Analog Switch

DESCRIPTION The DG3015 is a dual double-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed, low on-resistance and small physical size, the DG3015 is ideal for portable and battery powered applications requirin

Low-Voltage, Low RON, Dual DPDT Analog Switch

FEATURES • Low Voltage Operation (2.7 V to 3.3 V) • Low On-Resistance - RON: 0.8 Ω • 3 dB Loss at 100 MHz • Fast Switching: tON = 40 ns tOFF = 35 ns • MICRO FOOT® Package • Compliant to RoHS Directive 2002/95/EC BENEFITS • Reduced Power Consumption • High Accuracy • Reduce Board Space

Switching Application

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=2.2KΩ, R2=10KΩ)

N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

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