EasyPACK??2B module with Trench/Fieldstop IGBT H3 and rapid diode and PressFIT / NTC

Features • Electrical features - VCES = 650 V - IC nom = 150 A / ICRM = 300 A - Increased blocking voltage capability up to 650 V - Low inductive design - Low switching losses - Low VCE,sat • Mechanical features - Al2O3 substrate with low thermal resistance - Compact design - PressFIT c

EasyPACK™ 2B module with Trench/Fieldstop IGBT H3 and rapid diode and PressFIT / NTC

Features • Electrical features - VCES = 650 V - IC nom = 150 A / ICRM = 300 A - Increased blocking voltage capability up to 650 V - Low inductive design - Low switching losses - Low VCE,sat • Mechanical features - Al2O3 substrate with low thermal resistance - Compact design - PressFIT

650 V、300 A 三电平 IGBT 模块