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型号 功能描述 生产厂家 企业 LOGO 操作
DB35-12

Three-Phase Si-Bridge Rectifiers

Three-Phase Si-Bridge Rectifiers Forward Current: 35 A Reverse Voltage: 50 to 1600 V Features • Max. solder tmeperature: 260°C, max. 5s • UL recognized, file no. E63532 • VISO > 2500 V

SEMIKRON

赛米控丹佛斯

DB35-12

Three-Phase Si-Bridge-Rectifiers

文件:215.55 Kbytes Page:2 Pages

DIOTEC

德欧泰克

DB35-12

Bridge Rectifiers, Three Phase

DIOTEC

德欧泰克

DB35-12

Three-Phase Si-Bridge Rectifiers

文件:260.329 Kbytes Page:2 Pages

SEMIKRON

赛米控丹佛斯

DB35-12

Three-Phase Si-Bridge-Rectifiers

文件:97.48 Kbytes Page:2 Pages

DIOTEC

德欧泰克

DB35-12

Three-Phase Si-Bridge Rectifiers

文件:177.93 Kbytes Page:2 Pages

DIOTEC

德欧泰克

Rectifier Diode Avalanche Diode

VRRM = 800-1800 V IF(RMS) = 80 A IF(AV)M = 49 A Features ● International standard package, JEDEC DO-203 AB (DO-5) ● Planar glassivated chips Applications ● High power rectifiers ● Field supply for DC motors ● Power supplies Advantages ● Space and weight savings ● Simple mounting ● Imp

IXYS

艾赛斯

Rectifier Diode Avalanche Diode

VRRM = 800-1800 V IF(RMS) = 80 A IF(AV)M = 49 A Features ● International standard package, JEDEC DO-203 AB (DO-5) ● Planar glassivated chips Applications ● High power rectifiers ● Field supply for DC motors ● Power supplies Advantages ● Space and weight savings ● Simple mounting ● Imp

IXYS

艾赛斯

Rectifier Diode Avalanche Diode

VRRM = 800-1800 V IF(RMS) = 80 A IF(AV)M = 49 A Features ● International standard package, JEDEC DO-203 AB (DO-5) ● Planar glassivated chips Applications ● High power rectifiers ● Field supply for DC motors ● Power supplies Advantages ● Space and weight savings ● Simple mounting ● Imp

IXYS

艾赛斯

Single output 20W ~ 660W?

Features ● CE marking (Low Voltage Directive) ● Long life and high reliability Lifetime: 10 years or more, 40°C at full load (Internal fan is spare part) ● Wide operating temperature range: –20 ~ +71°C ● Input voltage range: 85 ~ 132VAC /170 ~ 265VAC ● 77 models, 15W ~ 660W ● 5 year

LAMBDA

电盛兰达

DB35-12产品属性

  • 类型

    描述

  • Package:

    DB

  • VRRM:

    1200 V

  • IFAV:

    35.00 A

  • Tjmax:

    150 °C

  • IFSM:

    450.00 A

  • VF:

    1.05 V

  • IF:

    17.50 A

  • IR:

    10.000 µA

  • Cj:

    pF

  • VR:

    V

更新时间:2026-5-13 19:56:00
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