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型号 功能描述 生产厂家 企业 LOGO 操作
DB15-04

Three-Phase Si-Bridge Rectifiers

Three-Phase Si-Bridge Rectifiers • Nominal current 15 A • Repetitive peak reverse voltage 50…1600 V • Plastic case with alu-bottom • Dimensions 28.5 x 28.5 x 10 [mm] • Weight approx. 21 g • Compo

DIOTEC

德欧泰克

DB15-04

Three-Phase Si-Bridge Rectifiers

Three-Phase Si-Bridge Rectifiers

SEMIKRON

赛米控丹佛斯

DB15-04

THREE - PHASE SILICON BRIDGE

THREE - PHASE SILICON BRIDGE FEATURES Rating to 1000 V Low forward voltage drop Small size,simple installation Tinned copper leads Mounting: Thru hole for #6 screw

BILIN

银河微电

DB15-04

Bridge Rectifiers, Three Phase

DIOTEC

德欧泰克

DB15-04

Three-Phase Si-Bridge-Rectifiers

文件:97.29 Kbytes Page:2 Pages

DIOTEC

德欧泰克

DB15-04

Three-Phase Si-Bridge Rectifiers

文件:231.24 Kbytes Page:2 Pages

SEMIKRON

赛米控丹佛斯

Three-Phase Si-Bridge Rectifiers

Three-Phase Si-Bridge Rectifiers • Nominal current 15 A • Repetitive peak reverse voltag e 50…1600 V • Metal case Dimensions 40 x 20 x 10 [mm] • Weight approx. 35 g • Compound has classification

DIOTEC

德欧泰克

IN-LINE HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes FEATURES ● Plastic Case With Heatsink For Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● The plastic package has Underwriters Laboratory Flammability Classification 94V-O

PANJIT

強茂

IN-LINE HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes FEATURES ● Plastic Case With Heatsink For Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● The plastic package has Underwriters Laboratory Flammability Classification 94V-O

TRSYS

Transys Electronics

LOW CAPACITANCE DETECTION DIODE

DESCRIPTION The STDD15 is a dual diode series for the detection of a RF signal and the compensation of the voltage drift with the temperature. The SOT323 package makes the device ideal in application where the space saving is critical like mobile phones. The low junction capacitance will reduce

STMICROELECTRONICS

意法半导体

Silicon Dual Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type)

文件:67.83 Kbytes Page:3 Pages

SIEMENS

西门子

DB15-04产品属性

  • 类型

    描述

  • Package:

    DB

  • VRRM:

    400 V

  • IFAV:

    15.00 A

  • Tjmax:

    150 °C

  • IFSM:

    350.00 A

  • VF:

    1.05 V

  • IF:

    12.50 A

  • IR:

    10.000 µA

  • Cj:

    pF

  • VR:

    V

更新时间:2026-5-13 19:56:00
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