PIN Diode 1 Section Attenuator

FEATURES • 800-1200 MHz • 50 dB Attenuator • 0.9 dB Insertion Loss • Constant Phase • TTL Control • Small 8 Pin 0.5 Sq. Package

PIN Diode 1 Section Attenuator

NPN Darlington transistors

DESCRIPTION NPN Darlington transistor in a TO-92 (SOT54) plastic package. PNP complement: BC878. FEATURES • High DC current gain (min. 1000) • High current (max. 1 A) • Low voltage (max. 80 V) • Integrated diode and resistor. APPLICATIONS • Relay drivers.

NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage

● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC 876, BC 878 BC 880 (PNP)

NPN SILICON PLANAR DARLINGTON TRANSISTORS

NPN Silicon Planar Darlington Transistors BD875, BD877 and BD879 are epitaxial NPN silicon planar darlington transistors in TO 126 plastic package (12 A 3 DIN 41869, sheet 4). These darlington transistors are designed for relay drivers as well as for general AF applications. BD876 BD878 and BD880

SILICON NPN EPITAXIAL TYPE TRANSISTOR

Description For 1.5V And 3V Electronic Flash Use. Features • Charger-up time is about 1 mS faster than of a germanium transistor. • Small saturation voltage can bring less power dissipation and flashing times.

SILICON NPN EPITAXIAL TYPE TRANSISTOR

Description For 1.5V and 3v electronic flash use. Features • Charger-up time is about 1 ms faster than of a germanium transistor • Small saturation voltage can bring less power dissipation and flashing times