DACxx6x Dual 16-, 14-, 12-Bit, Low-Power, Buffered, Voltage-Output DACs With 2.5-V, 4-PPM/°C Internal Reference

1 Features 1• Relative Accuracy: – DAC756x (12-Bit): 0.3 LSB INL – DAC816x (14-Bit): 1 LSB INL – DAC856x (16-Bit): 4 LSB INL • Glitch Impulse: 0.1 nV-s • Bidirectional Reference: Input or 2.5-V Output – Output Disabled by Default – ±5-mV Initial Accuracy (Max) – 4-ppm°C Temperature Drift

具有 2.5V、4ppm/°C 基准的 16 位、双路、低功耗、超低毛刺脉冲、缓冲电压输出 DAC

The DAC756x, DAC816x, and DAC856x devices are low-power, voltage-output, dual-channel, 16-, 14-, and 12-bit digital-to-analog converters (DACs), respectively. These devices include a 2.5-V, 4-ppm/°C internal reference, giving a full-scale output voltage range of 2.5 V or 5 V. The internal reference • Relative Accuracy: \n• DAC816x (14-Bit): 1 LSB INL\n• Glitch Impulse: 0.1 nV-s\n• Output Disabled by Default\n• 4-ppm°C Temperature Drift (Typ)\n• 20-mA Sink and Source Capability\n• Power-On Reset to Zero Scale or Mid-Scale\n• Wide Power-Supply Range: 2.7 V to 5.5 V\n• LDAC and CLR Functions\n• P;

DUAL 16-/14-/12-BIT, ULTRALOW-GLITCH, LOW-POWER, BUFFERED, VOLTAGE-OUTPUT

文件：1.31609 Mbytes Page：56 Pages

DUAL 16-/14-/12-BIT, ULTRALOW-GLITCH, LOW-POWER, BUFFERED, VOLTAGE-OUTPUT DAC WITH 2.5-V, 4-PPM/째C INTERNAL REFERENCE IN SMALL 3-MM 횞 3-MM SON

文件：1.88265 Mbytes Page：58 Pages

双路 16 位超低毛刺脉冲低功耗缓冲器电压输出 DAC

DAC756x-Q1、DAC816x-Q1 和 DAC856x-Q1 (DACxx6x-Q1) 器件分别为 12 位、14 位和 16 位低功耗、电压输出、双通道数模转换器 (DAC)。这些器件包括一个 2.5V，4ppm/°C 内部基准，从而提供了一个 2.5V 或 5V 的满量程输出电压范围。此内部基准有一个 ±5mV 的初始精度，并且能够在 VREFIN/VREFOUT引脚上提供或吸收高达 20mA 的电流。 这些器件是单片器件，从而提供了出色的线性并大大降低了有害的代码至代码转换时的瞬态电压（毛刺脉冲）。它们使用一个运行时钟速率高达 50MHz 的多用途 3 线制串口。此接口与标准 S • 适用于汽车电子 应用\n• 器件温度 1 级：-40°C 至 125°C 的环境运行温度范围\n• 器件组件充电模式 (CDM) ESD 分类等级 C4B\n• 相对精度： \n• DAC816x（14 位）：1 LSB INL\n• 毛刺脉冲：0.1 nV-s\n• 缺省情况下，输出被禁用\n• 4ppm/°C 温度漂移（典型值）\n• 20mA 拉灌电流能力\n• 加电复位至零量程或量程中点\n• 宽电源范围：2.7V 至 5.5V\n• LDAC 和 CLR 功能\n• 封装：超薄小外形尺寸封装 (VSSOP)-10;

DACxx6x Dual 16-, 14-, 12-Bit, Low-Power, Buffered, Voltage-Output DACs With 2.5-V, 4-PPM/°C Internal Reference

1 Features 1• Relative Accuracy: – DAC756x (12-Bit): 0.3 LSB INL – DAC816x (14-Bit): 1 LSB INL – DAC856x (16-Bit): 4 LSB INL • Glitch Impulse: 0.1 nV-s • Bidirectional Reference: Input or 2.5-V Output – Output Disabled by Default – ±5-mV Initial Accuracy (Max) – 4-ppm°C Temperature Drift

丝印代码：8563；DACxx6x Dual 16-, 14-, 12-Bit, Low-Power, Buffered, Voltage-Output DACs With 2.5-V, 4-PPM/°C Internal Reference

1 Features 1• Relative Accuracy: – DAC756x (12-Bit): 0.3 LSB INL – DAC816x (14-Bit): 1 LSB INL – DAC856x (16-Bit): 4 LSB INL • Glitch Impulse: 0.1 nV-s • Bidirectional Reference: Input or 2.5-V Output – Output Disabled by Default – ±5-mV Initial Accuracy (Max) – 4-ppm°C Temperature Drift

丝印代码：8563；DACxx6x Dual 16-, 14-, 12-Bit, Low-Power, Buffered, Voltage-Output DACs With 2.5-V, 4-PPM/°C Internal Reference

1 Features 1• Relative Accuracy: – DAC756x (12-Bit): 0.3 LSB INL – DAC816x (14-Bit): 1 LSB INL – DAC856x (16-Bit): 4 LSB INL • Glitch Impulse: 0.1 nV-s • Bidirectional Reference: Input or 2.5-V Output – Output Disabled by Default – ±5-mV Initial Accuracy (Max) – 4-ppm°C Temperature Drift

丝印代码：8563；DACxx6x Dual 16-, 14-, 12-Bit, Low-Power, Buffered, Voltage-Output DACs With 2.5-V, 4-PPM/°C Internal Reference

1 Features 1• Relative Accuracy: – DAC756x (12-Bit): 0.3 LSB INL – DAC816x (14-Bit): 1 LSB INL – DAC856x (16-Bit): 4 LSB INL • Glitch Impulse: 0.1 nV-s • Bidirectional Reference: Input or 2.5-V Output – Output Disabled by Default – ±5-mV Initial Accuracy (Max) – 4-ppm°C Temperature Drift

丝印代码：8563；DACxx6x Dual 16-, 14-, 12-Bit, Low-Power, Buffered, Voltage-Output DACs With 2.5-V, 4-PPM/°C Internal Reference

1 Features 1• Relative Accuracy: – DAC756x (12-Bit): 0.3 LSB INL – DAC816x (14-Bit): 1 LSB INL – DAC856x (16-Bit): 4 LSB INL • Glitch Impulse: 0.1 nV-s • Bidirectional Reference: Input or 2.5-V Output – Output Disabled by Default – ±5-mV Initial Accuracy (Max) – 4-ppm°C Temperature Drift

丝印代码：8563；DACxx6x Dual 16-, 14-, 12-Bit, Low-Power, Buffered, Voltage-Output DACs With 2.5-V, 4-PPM/°C Internal Reference

1 Features 1• Relative Accuracy: – DAC756x (12-Bit): 0.3 LSB INL – DAC816x (14-Bit): 1 LSB INL – DAC856x (16-Bit): 4 LSB INL • Glitch Impulse: 0.1 nV-s • Bidirectional Reference: Input or 2.5-V Output – Output Disabled by Default – ±5-mV Initial Accuracy (Max) – 4-ppm°C Temperature Drift

丝印代码：8563；DACxx6x Dual 16-, 14-, 12-Bit, Low-Power, Buffered, Voltage-Output DACs With 2.5-V, 4-PPM/°C Internal Reference

1 Features 1• Relative Accuracy: – DAC756x (12-Bit): 0.3 LSB INL – DAC816x (14-Bit): 1 LSB INL – DAC856x (16-Bit): 4 LSB INL • Glitch Impulse: 0.1 nV-s • Bidirectional Reference: Input or 2.5-V Output – Output Disabled by Default – ±5-mV Initial Accuracy (Max) – 4-ppm°C Temperature Drift

丝印代码：8563；DACxx6x Dual 16-, 14-, 12-Bit, Low-Power, Buffered, Voltage-Output DACs With 2.5-V, 4-PPM/°C Internal Reference

1 Features 1• Relative Accuracy: – DAC756x (12-Bit): 0.3 LSB INL – DAC816x (14-Bit): 1 LSB INL – DAC856x (16-Bit): 4 LSB INL • Glitch Impulse: 0.1 nV-s • Bidirectional Reference: Input or 2.5-V Output – Output Disabled by Default – ±5-mV Initial Accuracy (Max) – 4-ppm°C Temperature Drift

丝印代码：8563；DACxx6x Dual 16-, 14-, 12-Bit, Low-Power, Buffered, Voltage-Output DACs With 2.5-V, 4-PPM/°C Internal Reference

1 Features 1• Relative Accuracy: – DAC756x (12-Bit): 0.3 LSB INL – DAC816x (14-Bit): 1 LSB INL – DAC856x (16-Bit): 4 LSB INL • Glitch Impulse: 0.1 nV-s • Bidirectional Reference: Input or 2.5-V Output – Output Disabled by Default – ±5-mV Initial Accuracy (Max) – 4-ppm°C Temperature Drift

DAC8563T 双通道、16 位、低功耗，具有 2.5V、4ppm/°C、内部基准电压、可复位至中标度、5V TTL I/O

DAC856xT、DAC816xT 和 DAC756xT 器件分别为 16 位、14 位和 12 位低功耗电压输出双通道数模转换器 (DAC)。 这些器件包括一个 2.5V、 4ppm/°C 内部基准，从而提供了一个 2.5V 或 5V 的满量程输出电压范围。 此内部基准有一个 ±5mV 的初始精度，并且能够在 VREFIN/VREFOUT引脚上提供或吸收高达 20mA 的电流。 这些器件是单片器件，从而提供了出色的线性并大大降低了有害的代码至代码转换时的瞬态电压（毛刺脉冲）。 它们使用一个运行时钟速率高达 50MHz 的多用途 3 线制串口。 此接口与标准 SPI， QSPI， Microw • 相对精度：16 位时为 4 最低有效位 (LSB) 最大积分非线性 (INL)\n• 双向基准引脚：输入或 2.5V 输出 \n• 上电复位至零量程或量程中点\n• 宽电源范围：2.7V 至 5.5V\n• LDAC 和 CLR 功能\n• 与 DAC8562 系列引脚到引脚兼容\n• 封装：晶圆级小外形无引线 (WSON)-10 (3mm × 3mm)，超薄小外形尺寸 (VSSOP)-10\n• 温度范围：-40°C 至 125°C;

Low-Power, Buffered, Voltage-Output DACs

文件：1.92235 Mbytes Page：54 Pages

DUAL 16-/14-/12-BIT, ULTRALOW-GLITCH, LOW-POWER, BUFFERED, VOLTAGE-OUTPUT DAC WITH 2.5-V, 4-PPM/째C INTERNAL REFERENCE IN SMALL 3-MM 횞 3-MM SON

文件：1.88265 Mbytes Page：58 Pages

DUAL 16-/14-/12-BIT, ULTRALOW-GLITCH, LOW-POWER, BUFFERED, VOLTAGE-OUTPUT

文件：1.31609 Mbytes Page：56 Pages

Internal Reference

文件：1.9843 Mbytes Page：60 Pages

DUAL 16-/14-/12-BIT, ULTRALOW-GLITCH, LOW-POWER, BUFFERED, VOLTAGE-OUTPUT

文件：1.31609 Mbytes Page：56 Pages

DUAL 16-/14-/12-BIT, ULTRALOW-GLITCH, LOW-POWER, BUFFERED, VOLTAGE-OUTPUT DAC WITH 2.5-V, 4-PPM/째C INTERNAL REFERENCE IN SMALL 3-MM 횞 3-MM SON

文件：1.88265 Mbytes Page：58 Pages

Internal Reference

文件：1.9843 Mbytes Page：60 Pages

封装/外壳：10-TFSOP，10-MSOP（0.118"，3.00mm 宽） 包装：管件 描述：IC DAC 16BIT V-OUT 10VSSOP 集成电路（IC） 数模转换器（DAC）

封装/外壳：10-WFDFN 裸露焊盘 包装：管件 描述：IC DAC 16BIT V-OUT 10WSON 集成电路（IC） 数模转换器（DAC）

DUAL 16-/14-/12-BIT, ULTRALOW-GLITCH, LOW-POWER, BUFFERED, VOLTAGE-OUTPUT

文件：1.31609 Mbytes Page：56 Pages

DUAL 16-/14-/12-BIT, ULTRALOW-GLITCH, LOW-POWER, BUFFERED, VOLTAGE-OUTPUT DAC WITH 2.5-V, 4-PPM/째C INTERNAL REFERENCE IN SMALL 3-MM 횞 3-MM SON

文件：1.88265 Mbytes Page：58 Pages

Internal Reference

文件：1.9843 Mbytes Page：60 Pages

DUAL 16-/14-/12-BIT, ULTRALOW-GLITCH, LOW-POWER, BUFFERED, VOLTAGE-OUTPUT

文件：1.31609 Mbytes Page：56 Pages

DUAL 16-/14-/12-BIT, ULTRALOW-GLITCH, LOW-POWER, BUFFERED, VOLTAGE-OUTPUT DAC WITH 2.5-V, 4-PPM/째C INTERNAL REFERENCE IN SMALL 3-MM 횞 3-MM SON

文件：1.88265 Mbytes Page：58 Pages

Internal Reference

文件：1.9843 Mbytes Page：60 Pages

Low-Power, Buffered, Voltage-Output DACs

文件：1.92235 Mbytes Page：54 Pages

Internal Reference

文件：1.97856 Mbytes Page：60 Pages

Internal Reference

文件：1.97856 Mbytes Page：60 Pages

Internal Reference

文件：1.97856 Mbytes Page：60 Pages

Internal Reference

文件：1.97856 Mbytes Page：60 Pages

Internal Reference

文件：1.97856 Mbytes Page：60 Pages

1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX7460LE is a 1 480 nm pumping laser diode module with optical isolator for an EDFA (Er Doped optical Fiber Amplifier) that can expand the transmission span and compensate optical losses. It has a strained Multiple Quantum Well (st-MQW) DC-PBH laser diode that features high output

CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS

DESCRIPTION The NX8563LB Series is a 1 550 nm laser diode with Polarization Maintain Fiber (PMF). This device is designed as CW light source and ideal for D-WDM transmission systems in which external modulators are used. FEATURES • Output power Pf = 10 mW MIN. • Wavelength availability λp = 1

1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX8501 Series is a 1 510 nm phase-shifted DFB (Distributed Feed-Back) laser diode with single mode fiber. The Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation over wide temperature range of 0 to +65 °C. It is designed

Real-time clock/calendar

General description The PCF8563 is a CMOS real-time clock/calendar optimized for low power consumption. A programmable clock output, interrupt output and voltage-low detector are also provided. All address and data are transferred serially via a two-line bidirectional I2C-bus. Maximum bus spee

2 x 40 W/2 ohm stereo BTL car radio power amplifier with diagnostic facility

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