丝印代码：8562；DACxx6x Dual 16-, 14-, 12-Bit, Low-Power, Buffered, Voltage-Output DACs With 2.5-V, 4-PPM/°C Internal Reference

1 Features 1• Relative Accuracy: – DAC756x (12-Bit): 0.3 LSB INL – DAC816x (14-Bit): 1 LSB INL – DAC856x (16-Bit): 4 LSB INL • Glitch Impulse: 0.1 nV-s • Bidirectional Reference: Input or 2.5-V Output – Output Disabled by Default – ±5-mV Initial Accuracy (Max) – 4-ppm°C Temperature Drift

封装/外壳：10-WFDFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC DAC 16BIT V-OUT 10WSON 集成电路（IC） 数模转换器（DAC）

Internal Reference

文件：1.9843 Mbytes Page：60 Pages

DUAL 16-/14-/12-BIT, ULTRALOW-GLITCH, LOW-POWER, BUFFERED, VOLTAGE-OUTPUT DAC WITH 2.5-V, 4-PPM/째C INTERNAL REFERENCE IN SMALL 3-MM 횞 3-MM SON

文件：1.88265 Mbytes Page：58 Pages

DUAL 16-/14-/12-BIT, ULTRALOW-GLITCH, LOW-POWER, BUFFERED, VOLTAGE-OUTPUT

文件：1.31609 Mbytes Page：56 Pages

丝印代码：8562；DACxx6x Dual 16-, 14-, 12-Bit, Low-Power, Buffered, Voltage-Output DACs With 2.5-V, 4-PPM/°C Internal Reference

1 Features 1• Relative Accuracy: – DAC756x (12-Bit): 0.3 LSB INL – DAC816x (14-Bit): 1 LSB INL – DAC856x (16-Bit): 4 LSB INL • Glitch Impulse: 0.1 nV-s • Bidirectional Reference: Input or 2.5-V Output – Output Disabled by Default – ±5-mV Initial Accuracy (Max) – 4-ppm°C Temperature Drift

丝印代码：8562；DACxx6x Dual 16-, 14-, 12-Bit, Low-Power, Buffered, Voltage-Output DACs With 2.5-V, 4-PPM/°C Internal Reference

1 Features 1• Relative Accuracy: – DAC756x (12-Bit): 0.3 LSB INL – DAC816x (14-Bit): 1 LSB INL – DAC856x (16-Bit): 4 LSB INL • Glitch Impulse: 0.1 nV-s • Bidirectional Reference: Input or 2.5-V Output – Output Disabled by Default – ±5-mV Initial Accuracy (Max) – 4-ppm°C Temperature Drift

丝印代码：8562；DACxx6x Dual 16-, 14-, 12-Bit, Low-Power, Buffered, Voltage-Output DACs With 2.5-V, 4-PPM/°C Internal Reference

1 Features 1• Relative Accuracy: – DAC756x (12-Bit): 0.3 LSB INL – DAC816x (14-Bit): 1 LSB INL – DAC856x (16-Bit): 4 LSB INL • Glitch Impulse: 0.1 nV-s • Bidirectional Reference: Input or 2.5-V Output – Output Disabled by Default – ±5-mV Initial Accuracy (Max) – 4-ppm°C Temperature Drift

1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX7460LE is a 1 480 nm pumping laser diode module with optical isolator for an EDFA (Er Doped optical Fiber Amplifier) that can expand the transmission span and compensate optical losses. It has a strained Multiple Quantum Well (st-MQW) DC-PBH laser diode that features high output

1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE

DESCRIPTION The NX8562LB is a 1 550 nm laser diode with Polarization Maintain Fiber (PMF). This device is designed as CW light source and ideal for transmission systems in which external modulators are used. FEATURES • Output power Pf = 20 mW MIN. • Wavelength selectable for ITU-T standards

1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX8501 Series is a 1 510 nm phase-shifted DFB (Distributed Feed-Back) laser diode with single mode fiber. The Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation over wide temperature range of 0 to +65 °C. It is designed

1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE

DESCRIPTION The NX8562LB is a 1 550 nm laser diode with Polarization Maintain Fiber (PMF). This device is designed as CW light source and ideal for transmission systems in which external modulators are used. FEATURES • Output power Pf = 20 mW MIN. • Wavelength selectable for ITU-T standards

4 x 12 W single-ended car radio power amplifier with dynamic distortion detector and diagnostic interface

文件：123.91 Kbytes Page：16 Pages