丝印代码：7562；DACxx6x Dual 16-, 14-, 12-Bit, Low-Power, Buffered, Voltage-Output DACs With 2.5-V, 4-PPM/°C Internal Reference

1 Features 1• Relative Accuracy: – DAC756x (12-Bit): 0.3 LSB INL – DAC816x (14-Bit): 1 LSB INL – DAC856x (16-Bit): 4 LSB INL • Glitch Impulse: 0.1 nV-s • Bidirectional Reference: Input or 2.5-V Output – Output Disabled by Default – ±5-mV Initial Accuracy (Max) – 4-ppm°C Temperature Drift

丝印代码：7562；DACxx6x Dual 16-, 14-, 12-Bit, Low-Power, Buffered, Voltage-Output DACs With 2.5-V, 4-PPM/°C Internal Reference

1 Features 1• Relative Accuracy: – DAC756x (12-Bit): 0.3 LSB INL – DAC816x (14-Bit): 1 LSB INL – DAC856x (16-Bit): 4 LSB INL • Glitch Impulse: 0.1 nV-s • Bidirectional Reference: Input or 2.5-V Output – Output Disabled by Default – ±5-mV Initial Accuracy (Max) – 4-ppm°C Temperature Drift

丝印代码：7562；DACxx6x Dual 16-, 14-, 12-Bit, Low-Power, Buffered, Voltage-Output DACs With 2.5-V, 4-PPM/°C Internal Reference

1 Features 1• Relative Accuracy: – DAC756x (12-Bit): 0.3 LSB INL – DAC816x (14-Bit): 1 LSB INL – DAC856x (16-Bit): 4 LSB INL • Glitch Impulse: 0.1 nV-s • Bidirectional Reference: Input or 2.5-V Output – Output Disabled by Default – ±5-mV Initial Accuracy (Max) – 4-ppm°C Temperature Drift

丝印代码：7562；DACxx6x Dual 16-, 14-, 12-Bit, Low-Power, Buffered, Voltage-Output DACs With 2.5-V, 4-PPM/°C Internal Reference

1 Features 1• Relative Accuracy: – DAC756x (12-Bit): 0.3 LSB INL – DAC816x (14-Bit): 1 LSB INL – DAC856x (16-Bit): 4 LSB INL • Glitch Impulse: 0.1 nV-s • Bidirectional Reference: Input or 2.5-V Output – Output Disabled by Default – ±5-mV Initial Accuracy (Max) – 4-ppm°C Temperature Drift

DUAL 16-/14-/12-BIT, ULTRALOW-GLITCH, LOW-POWER, BUFFERED, VOLTAGE-OUTPUT DAC WITH 2.5-V, 4-PPM/째C INTERNAL REFERENCE IN SMALL 3-MM 횞 3-MM SON

文件：1.88265 Mbytes Page：58 Pages

Internal Reference

文件：1.9843 Mbytes Page：60 Pages

封装/外壳：10-WFDFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC DAC 12BIT V-OUT 10WSON 集成电路（IC） 数模转换器（DAC）

DUAL 16-/14-/12-BIT, ULTRALOW-GLITCH, LOW-POWER, BUFFERED, VOLTAGE-OUTPUT

文件：1.31609 Mbytes Page：56 Pages

DUAL 16-/14-/12-BIT, ULTRALOW-GLITCH, LOW-POWER, BUFFERED, VOLTAGE-OUTPUT

文件：1.31609 Mbytes Page：56 Pages

Internal Reference

文件：1.9843 Mbytes Page：60 Pages

DUAL 16-/14-/12-BIT, ULTRALOW-GLITCH, LOW-POWER, BUFFERED, VOLTAGE-OUTPUT DAC WITH 2.5-V, 4-PPM/째C INTERNAL REFERENCE IN SMALL 3-MM 횞 3-MM SON

文件：1.88265 Mbytes Page：58 Pages

封装/外壳：10-WFDFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC DAC 12BIT V-OUT 10WSON 集成电路（IC） 数模转换器（DAC）

InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

MULTIFUNCTION QUAD POWER AMPLIFIER WITH BUILT-IN DIAGNOSTICS FEATURES

DESCRIPTION The TDA7562 is a new BCD technology QUAD BRIDGE type of car radio amplifier in Flexiwatt27 package specially intended for car radio applications. DMOS POWER OUTPUT HIGH OUTPUT POWER CAPABILITY 4x25W/4Ω@ 14.4V, 1KHZ, 10 THD, 4x35W EIAJ MAX. OUTPUT POWER 4x60W/2Ω FULL I2