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D882晶体管资料

  • D882别名:D882三极管、D882晶体管、D882晶体三极管

  • D882生产厂家

  • D882制作材料:NPN

  • D882性质

  • D882封装形式:直插封装

  • D882极限工作电压:40V

  • D882最大电流允许值:3A

  • D882最大工作频率:<1MHZ或未知

  • D882引脚数:3

  • D882最大耗散功率:10W

  • D882放大倍数

  • D882图片代号:A-20

  • D882vtest:40

  • D882htest:999900

  • D882atest:3

  • D882wtest:10

  • D882代换 D882用什么型号代替

D882价格

参考价格:¥0.1928

型号:D88272-000 品牌:TE Connectivity / Rayche 备注:这里有D882多少钱,2026年最近7天走势,今日出价,今日竞价,D882批发/采购报价,D882行情走势销售排行榜,D882报价。
型号 功能描述 生产厂家 企业 LOGO 操作
D882

丝印代码:D882;SOT-223 Plastic-Encapsulate Transistors

Features Power Dissipation:1.5W Low Collector-emitter Saturation Voltage

DGNJDZ

南晶电子

丝印代码:D882;TO-220-3L Plastic-Encapsulate Transistors

FEATURES Power Dissipation

DGNJDZ

南晶电子

丝印代码:D882;TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power Dissipation:1.25W Low Collector-emitter Saturation Voltage

FS

丝印代码:D882;3A, 40V NPN Silicon Medium Power Transistor

文件:308.94 Kbytes Page:2 Pages

SECOS

喜可士

丝印代码:D882;NPN Silicon Medium Power Transistor

文件:309.83 Kbytes Page:2 Pages

SECOS

喜可士

D882

PNP TRANSISTOR

PNP TRANSISTOR 3.0A ● AF OUTPUT AMPLIFIER ● FOR DC-DC CONVERTER ● FOR CAMERA MOTOR DRIVER

STANSON

司坦森

D882

NPN MEDIUM POWER TRANSISTOR

Description The device is a NPN transistor manufactured by using planar technology resulting in rugged high performance devices. The complementary PNP type is 2SB772. Features ■ High current ■ Low saturation voltage ■ Complement to 2SB772 Applications ■ Voltage regulation ■ Relay driver ■

STMICROELECTRONICS

意法半导体

D882

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Power Dissipation

DGNJDZ

南晶电子

D882

SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Power dissipation

DGNJDZ

南晶电子

D882

NPN TRANSISTOR

FEATURES Power dissipation PCM: 500 mW (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

D882

NPN Silicon Epitaxial Planar Transistor

FEATURES ● Low saturation voltage. ● Excellent hFE linearity and high hFE. ● Less cramping space required due to small and thin Package and reducing the trouble for attachment to a radiator. APPLICATIONS ● Power amplifier application.

DSK

D882

SOT-89 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Power dissipation Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffix H

WILLAS

威伦电子

D882

PNP Transistors

Features ● Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A)

YFWDIODE

佑风微

D882

Plastic-Encapsulate Transistors

Plastic-Encapsulate Transistors FEATURES Power dissipation MARKING:882

HOTTECH

合科泰

D882

GENERAL PURPOSE TRANSISTORS NPN TRANSISTORS

DESCRIPTION The D882 is available in SOT 89 Package FEATURES  Power dissipation  Availabl e in SOT 89 P ackage

AITSEMI

创瑞科技

D882

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TEL

D882

NPN(for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver)

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

D882

NPN SILICON POWER TRANSISTOR

DESCRIPTION The 2SD882 is NPN silicon transistor suited for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. FEATURES • Low saturation voltage VCE(sat) = 0.5 V MAX. (IC = −2 A, IB = 0.2 A) • Excellent hFE linearity and high hFE hFE = 60 to

NEC

瑞萨

D882

NPN Silicon Epitaxial Planar Transistor

FEATURES ● Low saturation voltage. ● Excellent hFE linearity and high hFE. ● Less cramping space required due to small and thin Package and reducing the trouble for attachment to a radiator. APPLICATIONS ● Power amplifier application.

BILIN

银河微电

D882

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Power dissipation

DAYA

大亚电器

D882

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation

HTSEMI

金誉半导体

D882

TRANSISTOR ( NPN )

TRANSISTOR ( NPN )

PFS

平盛电子

D882

Plastic Encapsulate Transistors

NPN Type Plastic Encapsulate Transistors D882 TO-126 Package

SECOS

喜可士

D882

TO-126 Plastic-Encapsulate Transistors

文件:1.21868 Mbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

D882

SI NPN TRANSISTOR

文件:28.12 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

D882

TRANSISTOR竊?NPN 竊

文件:131.85 Kbytes Page:2 Pages

JIANGSU

长电科技

D882

TRANSISTOR竊뉿PN竊

文件:1.0171 Mbytes Page:3 Pages

JIANGSU

长电科技

D882

SOT-89 Plastic-Encapsulate Transistors

文件:3.64062 Mbytes Page:2 Pages

TUOFENG

拓锋半导体

D882

晶体管

JSCJ

长晶科技

D882

TRANSISTOR (NPN)

文件:262.56 Kbytes Page:2 Pages

KOOCHIN

灏展电子

丝印代码:D882H;TRANSISTOR (NPN)

FEATURE  Low VCE(sat)  Large current capacity

SHUNYE

顺烨电子

丝印代码:D882H;SOT-89-3L Plastic-Encapsulate Transistors

FEATURE Low VCE(sat) Large current capacity

DGNJDZ

南晶电子

丝印代码:D882H;TRANSISTOR (NPN)

FEATURE Low VCE(sat) Large current capacity

SY

顺烨电子

丝印代码:D882Z;TO-92 Plastic-Encapsulate Transistors

FEATURES Power dissipation

DGNJDZ

南晶电子

丝印代码:D882Z;TO-92 Plastic-Encapsulate Transistors

FEATURES Power dissipation

DGNJDZ

南晶电子

SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Power dissipation

DGNJDZ

南晶电子

SOT-223 Plastic-Encapsulate Transistors

Features Power Dissipation:1.5W Low Collector-emitter Saturation Voltage

DGNJDZ

南晶电子

NPN Silicon Plastic-Encapsulate Transistor

Features • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 1.25Watts of Power Dissipation. • Collector-current 3.0A • Collector-base Voltage 40V

MCC

NPN Silicon Plastic-Encapsulate Transistor

Features • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 1.25Watts of Power Dissipation. • Collector-current 3.0A • Collector-base Voltage 40V

MCC

NPN SILICON POWER TRANSISTOR

DESCRIPTION The 2SD882 is NPN silicon transistor suited for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. FEATURES • Low saturation voltage VCE(sat) = 0.5 V MAX. (IC = −2 A, IB = 0.2 A) • Excellent hFE linearity and high hFE hFE = 60 to

NEC

瑞萨

Bipolar Junction Transistor

FEATURES ● Features of good high temperature ● High switching speed APPLICATION Charger、 Emergency lamp and Electric toy control circuit

JINGDAO

晶导

Bipolar Junction Transistor

FEATURES ● Features of good high temperature ● High switching speed APPLICATION Charger、 Emergency lamp and Electric toy control circuit

JINGDAO

晶导

NPN Silicon Plastic-Encapsulate Transistor

Features • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 1.25Watts of Power Dissipation. • Collector-current 3.0A • Collector-base Voltage 40V

MCC

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Power dissipation

JIANGSU

长电科技

NPN Plastic Encapsulated Transistor

NPN Plastic Encapsulated Transistor FEATURES ● Power Dissipation

SECOS

喜可士

NPN EPITAXIAL SILICON TRANSISTOR

MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SB772SS APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator

UTC

友顺

NPN Silicon Plastic-Encapsulate Transistor

Features • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 1.25Watts of Power Dissipation. • Collector-current 3.0A • Collector-base Voltage 40V

MCC

三相无刷马达驱动电路

SILICORE

芯谷科技

中等功率双极型晶体管

MCC

SOT-89-3L Plastic-Encapsulate Transistors

文件:1.58429 Mbytes Page:4 Pages

JIANGSU

长电科技

TO-251-3L Plastic-Encapsulate Transistors

文件:1.84953 Mbytes Page:3 Pages

JIANGSU

长电科技

General Purpose Transistors

文件:193.32 Kbytes Page:4 Pages

COMCHIP

典琦

General Purpose Transistors

文件:193.32 Kbytes Page:4 Pages

COMCHIP

典琦

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR) 描述:TRANS NPN 30V 3A DPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCC

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR) 描述:TRANS NPN 30V 3A DPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCC

NPN Plastic Encapsulated Transistor

文件:214.92 Kbytes Page:2 Pages

SECOS

喜可士

NPN Plastic Encapsulated Transistor

文件:214.92 Kbytes Page:2 Pages

SECOS

喜可士

MEDIUM POWER LOW VOLTAGE TRANSISTOR

文件:159.66 Kbytes Page:4 Pages

UTC

友顺

MEDIUM POWER LOW VOLTAGE TRANSISTOR

文件:159.66 Kbytes Page:4 Pages

UTC

友顺

MEDIUM POWER LOW VOLTAGE TRANSISTOR

文件:159.66 Kbytes Page:4 Pages

UTC

友顺

D882产品属性

  • 类型

    描述

  • Polarity:

    NPN

  • PCM(W):

    1.25

  • IC(A):

    3

  • VCBO(V):

    40

  • VCEO(V):

    30

  • VEBO(V):

    6

  • hFEMin:

    60

  • hFEMax:

    400

  • hFE@VCE(V):

    2

  • hFE@IC(A):

    1

  • VCE(sat)(V):

    0.5

  • VCE(sat)@IC(A):

    2

  • VCE(sat)@IB(A):

    0.2

  • Package:

    TO-126

更新时间:2026-7-22 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CJ(江苏长电/长晶)
26+
10548
原厂订货渠道,支持账期,一站式服务!
长电
24+
TO251
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
UTC/友顺
25+
SOT-23
47265
UTC/友顺全新特价D882SSL即刻询购立享优惠#长期有货
CJ/长电
26+
SOT-89
18000
原装正品,可配单,支持实单
JSCJ/长晶科技
23+
SOT-89-3L
2000
全新、原装
CJ
2430+
TO252-2
8540
只做原装正品假一赔十为客户做到零风险!!
CJ/长电
24+
SOT-89-3L
50945
只做全新原装进口现货
FAIRCHILD
19+
TO126
18974
CJ
24+
TO-252
962000
郑重承诺只做原装进口现货
UTC
16+
SOT-23
16560
进口原装现货/价格优势!

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