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D882晶体管资料
D882别名：D882三极管、D882晶体管、D882晶体三极管
D882生产厂家：
D882制作材料：NPN
D882性质：
D882封装形式：直插封装
D882极限工作电压：40V
D882最大电流允许值：3A
D882最大工作频率：<1MHZ或未知
D882引脚数：3
D882最大耗散功率：10W
D882放大倍数：
D882图片代号：A-20
D882vtest：40
D882htest：999900
- D882atest：3
D882wtest：10
D882代换 D882用什么型号代替：
D882价格
参考价格：￥0.1928
型号：D88272-000 品牌：TE Connectivity / Rayche 备注：这里有D882多少钱，2024年最近7天走势，今日出价，今日竞价，D882批发/采购报价，D882行情走势销售排行榜，D882报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
D882 | PNPTRANSISTOR PNPTRANSISTOR3.0A ●AFOUTPUTAMPLIFIER ●FORDC-DCCONVERTER ●FORCAMERAMOTORDRIVER | STANSONStanson Technology Stanson 科技 |  |   |
D882 | NPNMEDIUMPOWERTRANSISTOR Description ThedeviceisaNPNtransistormanufacturedbyusingplanartechnologyresultinginruggedhighperformancedevices.ThecomplementaryPNPtypeis2SB772. Features ■Highcurrent ■Lowsaturationvoltage ■Complementto2SB772 Applications ■Voltageregulation ■Relaydriver ■ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | |
D882 | Plastic-EncapsulatedTransistors TRANSISTOR(NPN) FEATURES Powerdissipation PCM:1.25W(Tamb=25℃) Collectorcurrent ICM:3A Collector-basevoltage V(BR)CBO:40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited |  | |
D882 | TO-92Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES Powerdissipation | DAYADaya Electric Group Co., Ltd. Daya Electric Group Co., Ltd. |  | |
D882 | TRANSISTOR(NPN) TRANSISTOR(NPN) FEATURES Powerdissipation | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 |  | |
D882 | TRANSISTOR(NPN) TRANSISTOR(NPN) | PFSShenzhen Ping Sheng Electronics Co., Ltd. 平盛电子深圳市平盛电子有限公司 |  | |
D882 | PlasticEncapsulateTransistors NPNTypePlasticEncapsulateTransistors D882TO-126Package | SECOS SeCoS Halbleitertechnologie GmbH |  | |
D882 | SOT-89Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES Powerdissipation Pb-Freepackageisavailable RoHSproductforpackingcodesuffixG HalogenfreeproductforpackingcodesuffixH | WILLASWILLAS electronics corp 威倫威倫电子股份有限公司 |  | |
D882 | NPNTRANSISTOR FEATURES Powerdissipation PCM:500mW(Tamb=25℃) Collectorcurrent ICM:3A Collector-basevoltage V(BR)CBO:40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 |  | |
D882 | NPNSiliconEpitaxialPlanarTransistor FEATURES ●Lowsaturationvoltage. ●ExcellenthFElinearityandhighhFE. ●Lesscrampingspacerequiredduetosmallandthin Packageandreducingthetroubleforattachmenttoa radiator. APPLICATIONS ●Poweramplifierapplication. | DSK Diode Semiconductor Korea |  | |
D882 | NPNSiliconEpitaxialPlanarTransistor FEATURES ●Lowsaturationvoltage. ●ExcellenthFElinearityandhighhFE. ●Lesscrampingspacerequiredduetosmallandthin Packageandreducingthetroubleforattachmenttoa radiator. APPLICATIONS ●Poweramplifierapplication. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 |  | |
D882 | TO-126Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES PowerDissipation | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 |  | |
D882 | Plastic-EncapsulateTransistors Plastic-EncapsulateTransistors FEATURES Powerdissipation MARKING:882 | HOTTECHGuangdong Hottech Co. Ltd. 合科泰广东合科泰实业有限公司 |  | |
D882 | PNPTransistors Features ●ExcellenthFElinearityandhighhFE hFE=60to400(VCE=2V,IC=1A) | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 |  | |
D882 | NPN(fortheoutputstageof3wattsaudioamplifier,voltageregulator,DC-DCconverterandrelaydriver) SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
D882 | GENERALPURPOSETRANSISTORSNPNTRANSISTORS DESCRIPTION The D882isavailableinSOT89Package FEATURES Powerdissipation AvailableinSOT89Package | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 |  | |
D882 | NPNSILICONPOWERTRANSISTOR DESCRIPTION The2SD882isNPNsilicontransistorsuitedfortheoutputstageof3 wattsaudioamplifier,voltageregulator,DC-DCconverterandrelay driver. FEATURES •Lowsaturationvoltage VCE(sat)=0.5VMAX.(IC=−2A,IB=0.2A) •ExcellenthFElinearityandhighhFE hFE=60to | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
D882 | SOT-89-3LPlastic-EncapsulateTransistors FEATURES Powerdissipation | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | | |
D882 | SOT-223Plastic-EncapsulateTransistors Features PowerDissipation:1.5W LowCollector-emitterSaturationVoltage | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | | |
D882 | SOT-89Plastic-EncapsulateTransistors 文件：3.64062 Mbytes Page：2 Pages | TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓锋半导体深圳市拓锋半导体科技有限公司 |  | |
D882 | TRANSISTOR(NPN) 文件：262.56 Kbytes Page：2 Pages | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. |  | |
D882 | TRANSISTOR竊뉿PN竊 文件：1.0171 Mbytes Page：3 Pages | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd |  | |
D882 | TRANSISTOR竊?NPN竊 文件：131.85 Kbytes Page：2 Pages | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | | |
D882 | SINPNTRANSISTOR 文件：28.12 Kbytes Page：1 Pages | ETC1List of Unclassifed Manufacturers 未分类制造商 |  | |
D882 | TO-126Plastic-EncapsulateTransistors 文件：1.21868 Mbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 |  | |
SOT-89-3LPlastic-EncapsulateTransistors FEATURES Powerdissipation | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | | | |
SOT-223Plastic-EncapsulateTransistors Features PowerDissipation:1.5W LowCollector-emitterSaturationVoltage | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | | | |
NPNSiliconPlastic-EncapsulateTransistor Features •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Capableof1.25WattsofPowerDissipation. •Collector-current3.0A •Collector-baseVoltage40V | MCCMicro Commercial Components 美微科美微科半导体公司 |  | | |
SOT-89-3LPlastic-EncapsulateTransistors FEATURE LowVCE(sat) Largecurrentcapacity | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | | | |
NPNSiliconPlastic-EncapsulateTransistor Features •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Capableof1.25WattsofPowerDissipation. •Collector-current3.0A •Collector-baseVoltage40V | MCCMicro Commercial Components 美微科美微科半导体公司 | | | |
BipolarJunctionTransistor FEATURES ●Featuresofgoodhightemperature ●Highswitchingspeed APPLICATION Charger、Emergencylampand Electrictoycontrolcircuit | JINGDAOShenzhen Jingdao Electronic Co.,Ltd 晶道深圳市晶道电子有限公司 |  | | |
NPNSILICONPOWERTRANSISTOR DESCRIPTION The2SD882isNPNsilicontransistorsuitedfortheoutputstageof3 wattsaudioamplifier,voltageregulator,DC-DCconverterandrelay driver. FEATURES •Lowsaturationvoltage VCE(sat)=0.5VMAX.(IC=−2A,IB=0.2A) •ExcellenthFElinearityandhighhFE hFE=60to | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
BipolarJunctionTransistor FEATURES ●Featuresofgoodhightemperature ●Highswitchingspeed APPLICATION Charger、Emergencylampand Electrictoycontrolcircuit | JINGDAOShenzhen Jingdao Electronic Co.,Ltd 晶道深圳市晶道电子有限公司 | | | |
NPNSiliconPlastic-EncapsulateTransistor Features •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Capableof1.25WattsofPowerDissipation. •Collector-current3.0A •Collector-baseVoltage40V | MCCMicro Commercial Components 美微科美微科半导体公司 | | | |
TO-92Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●Powerdissipation | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | | | |
NPNPlasticEncapsulatedTransistor NPNPlasticEncapsulatedTransistor FEATURES ●PowerDissipation | SECOS SeCoS Halbleitertechnologie GmbH | | | |
TO-92Plastic-EncapsulateTransistors FEATURES Powerdissipation | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | | | |
NPNEPITAXIALSILICONTRANSISTOR MEDIUMPOWERLOWVOLTAGETRANSISTOR FEATURES *Highcurrentoutputupto3A *Lowsaturationvoltage *Complementto2SB772SS APPLICATIONS *Audiopoweramplifier *DC-DCconvertor *Voltageregulator | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  | | |
TO-92Plastic-EncapsulateTransistors FEATURES Powerdissipation | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | | | |
NPNSiliconPlastic-EncapsulateTransistor Features •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Capableof1.25WattsofPowerDissipation. •Collector-current3.0A •Collector-baseVoltage40V | MCCMicro Commercial Components 美微科美微科半导体公司 | | | |
SOT-89-3LPlastic-EncapsulateTransistors 文件：1.58429 Mbytes Page：4 Pages | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | | | |
TO-251-3LPlastic-EncapsulateTransistors 文件：1.84953 Mbytes Page：3 Pages | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | | | |
GeneralPurposeTransistors 文件：193.32 Kbytes Page：4 Pages | COMCHIPComchip Technology 典琦典琦科技股份有限公司 |  | | |
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：TRANS NPN 30V 3A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | MCCMicro Commercial Components 美微科美微科半导体公司 | | | |
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：TRANS NPN 30V 3A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | MCCMicro Commercial Components 美微科美微科半导体公司 | | | |
NPNPlasticEncapsulatedTransistor 文件：214.92 Kbytes Page：2 Pages | SECOS SeCoS Halbleitertechnologie GmbH | | | |
NPNPlasticEncapsulatedTransistor 文件：214.92 Kbytes Page：2 Pages | SECOS SeCoS Halbleitertechnologie GmbH | | | |
MEDIUMPOWERLOWVOLTAGETRANSISTOR 文件：159.66 Kbytes Page：4 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | | |
MEDIUMPOWERLOWVOLTAGETRANSISTOR 文件：159.66 Kbytes Page：4 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | | |
MEDIUMPOWERLOWVOLTAGETRANSISTOR 文件：159.66 Kbytes Page：4 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | | |
MEDIUMPOWERLOWVOLTAGETRANSISTOR 文件：159.66 Kbytes Page：4 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | | |
TRANSISTOR竊?NPN竊 文件：131.85 Kbytes Page：2 Pages | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | | | |
TRANSISTOR竊뉿PN竊 文件：1.0171 Mbytes Page：3 Pages | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | | | |
A-882SPST,1600Amps,28VDC 文件：35.59 Kbytes Page：1 Pages | MACOM Tyco Electronics |  | | |
7.12CHANNELHIGHDEFINITIONAUDIOCODEC 文件：1.32962 Mbytes Page：83 Pages | REALTEKRealtek Semiconductor Corp 瑞昱瑞昱半导体公司 |  | | |
7.12CHANNELHIGHDEFINITIONAUDIOCODEC 文件：1.32962 Mbytes Page：83 Pages | REALTEKRealtek Semiconductor Corp 瑞昱瑞昱半导体公司 | | | |
7.12CHANNELHIGHDEFINITIONAUDIOCODEC 文件：1.32962 Mbytes Page：83 Pages | REALTEKRealtek Semiconductor Corp 瑞昱瑞昱半导体公司 | | | |
7.12CHANNELHIGHDEFINITIONAUDIOCODEC 文件：1.32962 Mbytes Page：83 Pages | REALTEKRealtek Semiconductor Corp 瑞昱瑞昱半导体公司 | | |
D882产品属性
- 类型
描述
- 型号
D882
- 功能描述
TO-126 Plastic-Encapsulate Transistors
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
19+ |
TO126 |
18974 |
||||
NEC |
23+ |
TO-251 |
9526 |
||||
CJ/长电 |
22+ |
TO252-2 |
223 |
只做原装进口 免费送样!! |
|||
CJ/长电 |
22+ |
TO252-2 |
8550 |
只做原装正品假一赔十!正规渠道订货! |
|||
CJ |
12+PB |
SOT89 |
4485 |
原装现货!低价支持实单!贵了给接受价格! |
|||
CJ/长晶 |
24+ |
SOT-89-3L |
30000 |
长晶全系列二三极管原装优势供应,欢迎询价 |
|||
长电/长晶 |
21 |
TO-252 |
7500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SOT-89 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
CJ |
2008++ |
SOT-89 |
57200 |
新进库存/原装 |
|||
CJ |
22+23+ |
SOT-89 |
37943 |
绝对原装正品现货,全新深圳原装进口现货 |
D882芯片相关品牌
D882规格书下载地址
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2019-4-25
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