丝印代码：D879；TO-92 Plastic-Encapsulate Transistors

FEATURES In Applications Where Two NiCd Batteries are Used to rovide 2.4V, two 2SD879s are used. The charge time is approximately 1 second faster Than that of germanium transistors. Less power dissipation because of low Collector-to-Emitter Voltage VCE(sat), permitting more flashes of light

丝印代码：D879；TO-92 Plastic-Encapsulate Transistors

FEATURES In Applications Where Two NiCd Batteries are Used to rovide 2.4V, two 2SD879s are used. The charge time is approximately 1 second faster Than that of germanium transistors. Less power dissipation because of low Collector-to-Emitter Voltage VCE(sat), permitting more flashes of light

1.5V, 3V Strobe Applications

· In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. · The charge time is approximately 1 second faster than that of germanium transistors. · Less power dissipation because of low Collector-to Emitter Voltage VCE(sat), permitting more flashes of

NPN Darlington transistors

DESCRIPTION NPN Darlington transistor in a TO-92 (SOT54) plastic package. PNP complement: BC878. FEATURES • High DC current gain (min. 1000) • High current (max. 1 A) • Low voltage (max. 80 V) • Integrated diode and resistor. APPLICATIONS • Relay drivers.

NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage

● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC 876, BC 878 BC 880 (PNP)

NPN SILICON PLANAR DARLINGTON TRANSISTORS

NPN Silicon Planar Darlington Transistors BD875, BD877 and BD879 are epitaxial NPN silicon planar darlington transistors in TO 126 plastic package (12 A 3 DIN 41869, sheet 4). These darlington transistors are designed for relay drivers as well as for general AF applications. BD876 BD878 and BD880

SILICON NPN EPITAXIAL TYPE TRANSISTOR

Description For 1.5V And 3V Electronic Flash Use. Features • Charger-up time is about 1 mS faster than of a germanium transistor. • Small saturation voltage can bring less power dissipation and flashing times.

SILICON NPN EPITAXIAL TYPE TRANSISTOR

Description For 1.5V and 3v electronic flash use. Features • Charger-up time is about 1 ms faster than of a germanium transistor • Small saturation voltage can bring less power dissipation and flashing times