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型号 功能描述 生产厂家 企业 LOGO 操作
D86DR1

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 4.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

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