NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed for lowfrequency power amplifiers and low-speed switching. This transistor is ideal for direct driving from the IC output of devices

D Series

FEATURES • Low losses • High stability • High capacitance in small size • Kinked (preferred) or straight leads • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Bypassing • Coupling • Resonant circuit

Ceramic Disc Capacitors Class 1 and 2, 100 VDC, General Purpose

FEATURES • Low losses • High stability • High capacitance in small size • Kinked (preferred) or straight leads • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Bypassing • Coupling • Resonant circuit

Ceramic Disc Capacitors Class 1 and 2, 100 VDC, General Purpose

FEATURES • Low losses • High stability • High capacitance in small size • Kinked (preferred) or straight leads • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Bypassing • Coupling • Resonant circuit

D Series

FEATURES • Low losses • High stability • High capacitance in small size • Kinked (preferred) or straight leads • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Bypassing • Coupling • Resonant circuit

Ceramic Disc Capacitors Class 1 and 2, 100 VDC, General Purpose

FEATURES • Low losses • High stability • High capacitance in small size • Kinked (preferred) or straight leads • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Bypassing • Coupling • Resonant circuit

Ceramic Disc Capacitors Class 1 and 2, 100 VDC, General Purpose

FEATURES • Low losses • High stability • High capacitance in small size • Kinked (preferred) or straight leads • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Bypassing • Coupling • Resonant circuit

Technical Product Specification

文件：2.0268 Mbytes Page：94 Pages

压力传感器类型

压力传感器类型

Technical Product Specification

Technical Product Specification

文件：2.04024 Mbytes Page：98 Pages

Technical Product Specification

文件：1.97126 Mbytes Page：102 Pages

Technical Product Specification

文件：2.23865 Mbytes Page：104 Pages

Ceramic Singlelayer DC Disc Capacitors For General Purpose Class 1, Class 2 and Class 3, 50 VDC, 100 VDC, 500 VDC

文件：123.29 Kbytes Page：9 Pages

Ceramic Singlelayer DC Disc Capacitors For General Purpose Class 1, Class 2 and Class 3, 50 VDC, 100 VDC, 500 VDC

文件：123.29 Kbytes Page：9 Pages

Technical Product Specification

文件：1.92828 Mbytes Page：88 Pages

封装/外壳：径向，圆片式 包装：散装 描述：CAP CER 56PF 500V U2J RADIAL 电容器 陶瓷电容器

Ceramic Disc Capacitors Class 1 and 2, 50 V (DC) General Purpose

文件：113.12 Kbytes Page：7 Pages

Ceramic Disc Capacitors Class 1 and 2, 50 V (DC) General Purpose

文件：113.12 Kbytes Page：7 Pages

封装/外壳：径向，圆片式 包装：散装 描述：CAP CER 56PF 50V SL RADIAL 电容器 陶瓷电容器

Ceramic Disc Capacitors Class 1 and 2, 100 VDC, General Purpose

文件：323.42 Kbytes Page：7 Pages

Ceramic Disc Capacitors Class 1 and 2, 100 VDC, General Purpose

文件：323.42 Kbytes Page：7 Pages

D Series

文件：295.82 Kbytes Page：6 Pages

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

Pentium 4 Processors Supporting Hyper-Threading Technology

Introduction The Intel® Pentium® 4 processor on 90 nm process in the 775-land package is a follow on to the Pentium 4 processor in the 478-pin package with enhancements to the Intel NetBurst® microarchitecture. The Pentium 4 processor on 90 nm process in the 775-land package uses FlipChip Land Gr

SUBMINIATURE FUSEHOLDERS

文件：117.72 Kbytes Page：1 Pages

ELECTRONIC BREAKERLESS CONVERSION KIT

文件：95.62 Kbytes Page：4 Pages

HCMOS / TTL

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