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D50N06

丝印代码:D50N06;50A 60V N-channel Enhancement Mode Power MOSFET

文件:808.18 Kbytes Page:10 Pages

WXDH

东海半导体

D50N06

丝印代码:D50N06;50A 60V N-channel Enhancement Mode Power MOSFET

文件:807.77 Kbytes Page:10 Pages

WXDH

东海半导体

D50N06

丝印代码:D50N06;50A 60V N-channel Enhancement Mode Power MOSFET

文件:808.72 Kbytes Page:10 Pages

WXDH

东海半导体

D50N06

丝印代码:D50N06;50A 60V N-channel Enhancement Mode Power MOSFET

文件:812.59 Kbytes Page:10 Pages

WXDH

东海半导体

D50N06

丝印代码:D50N06;50A 60V N-channel Enhancement Mode Power MOSFET

文件:807.99 Kbytes Page:10 Pages

WXDH

东海半导体

D50N06

丝印代码:D50N06;50A 60V N-channel Enhancement Mode Power MOSFET

文件:808.45 Kbytes Page:10 Pages

WXDH

东海半导体

丝印代码:D50N06;N-Channel Enhancement Mode Power MOSFET

文件:726.83 Kbytes Page:6 Pages

HUILIDAShenzhen hui lida electronic co., LTD

汇利达广东汇利达半导体有限公司

丝印代码:D50N06;N-Channel Enhancement Mode Power MOSFET

文件:508.01 Kbytes Page:6 Pages

KERSEMI

TMOS POWER FET LOGIC LEVEL 50 AMPERES 60 VOLTS

TMOS E-FET Power Field Effect Transistors D2PAK for Surface Mount Logic Level TMOS (L2TMOS) N–Channel Enhancement–Mode Silicon Gate These TMOS Power FETs are designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. This

MOTOROLA

摩托罗拉

TMOS POWER FET 42 AMPERES 60 VOLTS

TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy

MOTOROLA

摩托罗拉

TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed fo

MOTOROLA

摩托罗拉

TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM

TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resis tance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and

MOTOROLA

摩托罗拉

TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed fo

MOTOROLA

摩托罗拉

更新时间:2026-3-18 17:13:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
TO252
15620
一级代理 原装正品假一罚十价格优势长期供货
VB
2026+
TO-252
5715
原装正品,假一罚十!
ST
23+24
SOT252
16790
专业经营各种场效应管、三极管、IGBT、可控硅、稳压IC
VBSEMI/微碧半导体
24+
TO252
7800
全新原厂原装正品现货,低价出售,实单可谈
ST
24+
TO-252
50
ST/意法
23+
TO-252
26550
原厂授权一级代理,专业海外优势订货,价格优势、品种
VBSEMI
20+
SOT-252
10130
全新 发货1-2天
ST
26+
TO-252
60000
只有原装 可配单
ST
25+
TO-252
2650
原装优势!绝对公司现货
N
23+
TO-252
8400
专注配单,只做原装进口现货

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