| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
D50N06 | 丝印代码:D50N06;50A 60V N-channel Enhancement Mode Power MOSFET 文件:808.18 Kbytes Page:10 Pages | WXDH 东海半导体 | ||
D50N06 | 丝印代码:D50N06;50A 60V N-channel Enhancement Mode Power MOSFET 文件:807.77 Kbytes Page:10 Pages | WXDH 东海半导体 | ||
D50N06 | 丝印代码:D50N06;50A 60V N-channel Enhancement Mode Power MOSFET 文件:808.72 Kbytes Page:10 Pages | WXDH 东海半导体 | ||
D50N06 | 丝印代码:D50N06;50A 60V N-channel Enhancement Mode Power MOSFET 文件:812.59 Kbytes Page:10 Pages | WXDH 东海半导体 | ||
D50N06 | 丝印代码:D50N06;50A 60V N-channel Enhancement Mode Power MOSFET 文件:807.99 Kbytes Page:10 Pages | WXDH 东海半导体 | ||
D50N06 | 丝印代码:D50N06;50A 60V N-channel Enhancement Mode Power MOSFET 文件:808.45 Kbytes Page:10 Pages | WXDH 东海半导体 | ||
丝印代码:D50N06;N-Channel Enhancement Mode Power MOSFET 文件:726.83 Kbytes Page:6 Pages | HUILIDAShenzhen hui lida electronic co., LTD 汇利达广东汇利达半导体有限公司 | |||
丝印代码:D50N06;N-Channel Enhancement Mode Power MOSFET 文件:508.01 Kbytes Page:6 Pages | KERSEMI | |||
TMOS POWER FET LOGIC LEVEL 50 AMPERES 60 VOLTS TMOS E-FET Power Field Effect Transistors D2PAK for Surface Mount Logic Level TMOS (L2TMOS) N–Channel Enhancement–Mode Silicon Gate These TMOS Power FETs are designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. This | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 42 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed fo | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resis tance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed fo | MOTOROLA 摩托罗拉 |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
TO252 |
15620 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
VB |
2026+ |
TO-252 |
5715 |
原装正品,假一罚十! |
|||
ST |
23+24 |
SOT252 |
16790 |
专业经营各种场效应管、三极管、IGBT、可控硅、稳压IC |
|||
VBSEMI/微碧半导体 |
24+ |
TO252 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
|||
ST |
24+ |
TO-252 |
50 |
||||
ST/意法 |
23+ |
TO-252 |
26550 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
VBSEMI |
20+ |
SOT-252 |
10130 |
全新 发货1-2天 |
|||
ST |
26+ |
TO-252 |
60000 |
只有原装 可配单 |
|||
ST |
25+ |
TO-252 |
2650 |
原装优势!绝对公司现货 |
|||
N |
23+ |
TO-252 |
8400 |
专注配单,只做原装进口现货 |
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D50N06规格书下载地址
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DdatasheetPDF页码索引
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