Full blocking capability 50/60Hz over a wide temperature range

Key Parameters    VRRM 9000 V    IFAVM 550 A (TC=100 °C)    IFSM 3570A (T 11000 A C=55°C)    VT0 1,04 V    rT 1,8 mΩ    RthJC 28 K/kW    Clamping Force 10 … 16 kN    Max. Diameter 58,5 mm    Contact Diameter 34 mm    Height 26,9 mm Features • Full blocking capability 50/60Hz over a wid

Netz-Gleichrichterdiode Rectifier Diode

Rectifier Diode

Netz-Gleichrichterdiode Rectifier Diode

二极管盘

\n优势:\n• 可靠性高，可以大幅度地减少维护并减少停机\n• 通过串联和并联的特殊设计，轻松实现系统功率调节;

封装/外壳：DO-200AB，B-PUK 包装：散装 描述：DIODE GEN PURP 8.5KV 760A 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：DO-200AB，B-PUK 包装：卷带（TR） 描述：DIODE GEN PURP 9KV 760A 分立半导体产品 二极管 - 整流器 - 单

CMOS 80 MHz Monolithic 256 x 24(18) Color Palette RAM-DACs

GENERAL DESCRIPTION The ADV478 (ADV®) and ADV471 are pin compatible and software compatible RAM-DACs designed specifically for Personal System/2 compatible color graphics. The ADV478 has a 256 × 24 color lookup table with triple 8-bit video D/A converters. It may be configured for either 6 bits

NPN high-voltage transistors

DESCRIPTION NPN transistors in a TO-126; SOT32 plastic package. PNP complements: BF470 and BF472. FEATURES • Low feedback capacitance. APPLICATIONS • Intended for class-B video output stages in television receivers and for high-voltage IF output stages.

Silicon NPN Transistor RF Power Output PO = 100W @ 30MHz

Description: The NTE471 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes state–of–the–art diffused emitter ballasting for improved ruggedness and reliability. Features: • Better than 15dB Gain at 30MHz and 100W (CW/PEP)

HIGH SPEED, LOW NOISE QUAD OPERATIONAL AMPLIFIER

NPN Darlington With built-in avalanche diode

NPN Darlington With built-in avalanche diode