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D45C12G

丝印代码:D45C12G;Complementary Silicon Power Transistor

Features • Low Collector−Emitter Saturation Voltage − 0.5 V (Max) • High ft for Good Frequency Response • Low Leakage Current • Pb−Free Packages are Available*

ONSEMI

安森美半导体

D45C12G

Complementary Silicon Power Transistor

Complementary Silicon Power Transistor The D45C12 and D44C12 are for general purpose driver or medium power output stages in CW or switching applications. Features • Low Collector-Emitter Saturation Voltage - 0.5 V (Max) • High ft for Good Frequency Response • Low Leakage Curren

ONSEMI

安森美半导体

D45C12G

封装/外壳:TO-220-3 包装:托盘 描述:TRANS PNP 80V 4A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

Complementary Silicon Power Transistor

Features • Low Collector−Emitter Saturation Voltage − 0.5 V (Max) • High ft for Good Frequency Response • Low Leakage Current • Pb−Free Packages are Available*

ONSEMI

安森美半导体

COMPLEMENTARY SILICON POWER TRANSISTORS

4 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 30-80 VOLTS 30 WATTS FEATURES * Very Low Collector Saturation Voltage * Excellent Linearity * Fast Switching * PNP Values are Negative, Observe Proper Polarity.

BOCA

博卡

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type D44C Series ·Very low collector saturation voltage ·Fast switching APPLICATIONS ·Designed for various specific and general purpose application ·Shunt and switching regulators ·Low and high frequency inverters converters and etc.

SAVANTIC

Complementary Silicon Power Transistor

Complementary Silicon Power Transistor The D45C12 and D44C12 are for general purpose driver or medium power output stages in CW or switching applications. Features • Low Collector-Emitter Saturation Voltage - 0.5 V (Max) • High ft for Good Frequency Response • Low Leakage Curren

ONSEMI

安森美半导体

Edgeboard Connectors, Dual Readout, 0.100 [2.54mm] C-C, Standard and Right Angle Terminals

文件:158.89 Kbytes Page:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

D45C12G产品属性

  • 类型

    描述

  • 型号

    D45C12G

  • 功能描述

    两极晶体管 - BJT 4A 80V 30W PNP

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2026-5-17 16:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
24+
TO-2203LEADSTANDA
8866
ONSemiconductor
24+
NA
3000
进口原装正品优势供应
FSC
838+
TO-220
2345
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ON/安森美
22+
TO-220
6000
十年配单,只做原装
FSC
23+
TO-220
50000
全新原装正品现货,支持订货
ON/安森美
23+
TO-TO-220
35400
原厂授权一级代理,专业海外优势订货,价格优势、品种
26+
N/A
65000
一级代理-主营优势-实惠价格-不悔选择
FAIRCHILD/仙童
23+
TO-220
50000
全新原装正品现货,支持订货
FAIRCHILD
24+
TO220
65200
一级代理/放心采购
FAIRCHILD
05+
原厂原装
4288
只做全新原装真实现货供应

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