64M-bit Synchronous DRAM 4-bank, LVTTL

Description The µPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 × 4 × 4, 2,097,152 × 8 × 4, 1,048,576 ×16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pipelin

64M-bit Synchronous DRAM 4-bank, LVTTL

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.

Quadruple ESD transient voltage suppressor

DESCRIPTION Monolithic transient voltage suppressor diode in a six lead SOT457 (SC-74) package for 4-bit wide ESD transient suppression at 5.6 V level. FEATURES • ESD rating >8 kV, according to IEC1000-4-2 • SOT457 surface mount package • Common anode configuration • Non-clamping range −0.5

High Speed Response Type OPIC Light Detector

■ Features 1. High speed response (t PHL : TYP.230ns ) 2. Uses a pattern to allow for possible positional deviation of the semiconductor laser spot. 3. Compact, mini-flat package ■ Applications 1. Laser beam printers

N-Channel Silicon JFET General Purpose Amp, Switch

Description: The NTE456 is an N–Channel junction silicon field–effect transistor in a TO72 type package designed for general purpose amplifier and switching applications.

Low-voltage avalanche regulator diodes

DESCRIPTION High performance voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The series consists of PLVA450A to PLVA468A. FEATURES • Very low dynamic impedance at low currents: approximately 1⁄20 of conventional series • Hard breakdown knee • Low noise: a