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D40D10晶体管资料

  • D40D10...11别名:D40D10...11三极管、D40D10...11晶体管、D40D10...11晶体三极管

  • D40D10...11生产厂家:美国通用电器公司

  • D40D10...11制作材料:Si-NPN

  • D40D10...11性质:低频或音频放大 (LF)_功率放大 (L)

  • D40D10...11封装形式:直插封装

  • D40D10...11极限工作电压:90V

  • D40D10...11最大电流允许值:1A

  • D40D10...11最大工作频率:<1MHZ或未知

  • D40D10...11引脚数:3

  • D40D10...11最大耗散功率:4W

  • D40D10...11放大倍数

  • D40D10...11图片代号:A-61

  • D40D10...11vtest:90

  • D40D10...11htest:999900

  • D40D10...11atest:1

  • D40D10...11wtest:4

  • D40D10...11代换 D40D10...11用什么型号代替:BD529,3DA102B,

型号 功能描述 生产厂家 企业 LOGO 操作
D40D10

NPN SILICON POWER TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR D40D series types are NPN silicon power transistors designed for amplifier and switching applications. The PNP complementary types are the D41D series. MARKING: FULL PART NUMBER

CENTRAL

D40D10

Trans GP BJT NPN 75V 1A 3-Pin(3+Tab) TO-202

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN Transistors

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ETCList of Unclassifed Manufacturers

未分类制造商

POWER MODULES DIODE

Description The B40J /B40C /B40D series of B-modules use power diodes in half0bridge configuration. The semiconductors are electrically isolated from the metal base allowing common heatsink and compact assemblies to be built. They can be interconnected to form single or three phase bridges.

IRF

D40D10产品属性

  • 类型

    描述

  • Configuration:

    Single

  • Material:

    Si

  • Maximum Collector Emitter Saturation Voltage:

    1@50mA@500mAV

  • Maximum Collector Emitter Voltage:

    75V

  • Maximum DC Collector Current:

    1A

  • Maximum Emitter Base Voltage:

    5V

  • Maximum Operating Temperature:

    150°C

  • Maximum Power Dissipation:

    6250mW

  • Type:

    NPN

更新时间:2026-8-1 17:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
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867
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