高性能、多模式PWM控制器电路

D2361是一款高性能、多模式PWM控制器，能实现宽输入范围及负载轻满载的性能最优化。 \n 在低压满载时，D2361工作在CCM模式，固定频率为65KHZ；在高压满载时，D2361工作在QR 模式；在负载满载、不同输入电压下保持高效率。随着负载进一步减小，D2361工作在PFM模式下；在轻载或空载的情况下，D2361进入Burst Mode，减小功率损耗。\n D2361提供完整的保护功能，包括逐周期限流（OCP）、欠压锁定（UVLO）、输出OVP、VCC OVP、过载保护（OLP）等。同时具有FB、CS、DEM开环保护功能。 \n D2361采用SOT-23-6封装形式。 ·多模式工作方式（CCM、QR、PFM、Burst Mode）\n·低启动电流（典型5μA）\n·内置频率抖动可以降低EMI\n·过流、过压保护\n·欠压锁定及自动重启\n·内部软启动电路\n·间歇工作模式(Burst Mode)\n·逐周期限流模式\n·内置OTP;

POWER TRANSISTORS(0.5A,350V,30W)

NPN SILICON HIGH-VOLTAGE TRANSISTORS . . . useful for general–purpose, high voltage applications requiring high fT. FEATURES: • Collector–Emitter Sustaining Voltage — VCEO(sus) = 350 V (Min) @ IC = 2.5 mA • DC Current Gain — hFE = 40 (Min) @ IC = 100 mA — MJE2361T • Current–Gain–Bandwidth P

0.5 AMPERE POWER TRANSISTORS NPN SILICON 350 VOLTS 30 WATTS

NPN Silicon High-Voltage Transistor . . . useful for general–purpose, high voltage applications requiring high fT. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 350 Vdc (Min) @ IC = 2.5 mAdc • DC Current Gain — hFE = 40 (Min) @ IC = 100 mAdc — MJE2361T • Current–Gain–Bandwidth Product —

Silicon Complementary Transistors High Speed Switch

High Speed Switch Description: The NTE2361 (NPN) and NTE2362 (PNP) complimentary silicon transistors are designed for general–purpose amplifier and high speed switching applications. The high gain of these devices makes it possible for them to be driven directly from integrated circuits.

HIGH-PERFORMANCE LOW-VOLTAGE OPERATIONAL AMPLIFIERS

文件：274.77 Kbytes Page：17 Pages

HIGH-PERFORMANCE LOW-VOLTAGE OPERATIONAL AMPLIFIERS

文件：274.77 Kbytes Page：17 Pages