丝印代码：D2311D；Single-Channel Ultra-Fast Gate Driver

Features ◼ Gate Driver Voltage Range 4.5 V to 5.5 V ◼ Minimum Input Pulse Width 1.25 ns (220 pF load) ◼ Typical Rise Time 0.65 ns (220 pF load) ◼ Typical Fall Time 0.70 ns (220 pF load) ◼ Built-in Undervoltage Lockout (UVLO) between VCC and GND ◼ Inverting and Non-inverting Inputs ◼ Small

丝印代码：D2311C；Single-Channel Ultra-Fast Gate Driver For Automotive

Features ◼ AEC-Q100 Qualified(Note 1) ◼ Gate Driver Voltage Range 4.5 V to 5.5 V ◼ Minimum Input Pulse Width 1.25 ns (220 pF load) ◼ Typical Rise Time 0.65 ns (220 pF load) ◼ Typical Fall Time 0.70 ns (220 pF load) ◼ Built-in Undervoltage Lockout (UVLO) between VCC and GND ◼ Inverting and

Silicon NPN Transistor High Voltage, High Speed Switch

Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications. Features: ● High Blocking Capability: VCEX = 1000V ● Wide Surge Area: ICSM = 55A @ 350V Applications: ● Switchmode Power Supply ● DC/DC and DC/AC Co

PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications

文件：662.5 Kbytes Page：29 Pages

PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications

文件：662.5 Kbytes Page：29 Pages

PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications

文件：662.5 Kbytes Page：29 Pages

DUAL HOT SWAP POWER CONTROLLER WITH INTERDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING

文件：423.2 Kbytes Page：22 Pages