Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Very low C(rss)\n• Simple bias circuits\n• Low noise\n• High gain - 11 dB minimum;

METAL GATE RF SILICON FET

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35-40GHz Low Noise, Variable Gain Amplifier

Description The CHA2294 is a high gain four-stage monolithic low noise amplifier with variable gain. It is designed for a wide range of applications, from military to commercial communication systems.The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process.

16/32-bit ARM microcontrollers 256 kB ISP/IAP Flash with CAN, 10-bit ADC and external memory interface

General description The LPC2292/LPC2294 are based on a 16/32 bit ARM7TDMI-S™ CPU with real-time emulation and embedded trace support, together with 256 kilobytes (kB) of embedded high speed flash memory. A 128-bit wide memory interface and a unique accelerator architecture enable 32-bit code ex

FM IF IC FOR PAGER

文件：313.54 Kbytes Page：10 Pages

FM IF IC FOR PAGER

文件：313.54 Kbytes Page：10 Pages