METAL GATE RF SILICON FET

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OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Very low C(rss)\n• Simple bias circuits\n• Low noise\n• High gain - 11 dB minimum;

METAL GATE RF SILICON FET

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24.5-29.5GHz Low Noise, Variable Gain Amplifier

Description The CHA2293 is a high gain four-stage monolithic low noise amplifier with variable gain. It is designed for a wide range of applications, from military to commercial communication systems.The backside of the chip is both RF and DC grounded. This helps simplify the assembly process. M

20-24GHz Integrated Down Converter

Description The CHR2293 is a multifunction chip which integrates a LO X2 multiplier, a balanced cold FET mixer, and a RF LNA. It is designed for a wide range of applications, typically commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the as

4-INPUT 1MUTE VIDEO SWITCH

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4-INPUT 1MUTE VIDEO SWITCH

文件：160.76 Kbytes Page：4 Pages