GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W - 12.5V - 1GHz SINGLE ENDED

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Gold metallised multi-purpose silicon DMOS RF FET

100V N-Channel MOSFET

General Description The AON2290 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS 100V ID (at VGS=1

10-18GHz Low Noise, Variable Gain Amplifier

Description The CHA2290 is a high gain four-stage monolithic low noise amplifier with variable gain. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process

WASHERS

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PLL Synthesizer Module

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Surface Mount Zener Diodes

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