Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Simple bias cicuits\n• Low noise\n• High gain - 13 dB minimum;

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W - 28V - 500MHz SINGLE ENDED

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GSM/DCS/PCS power amplifier

GENERAL DESCRIPTION The CGY2014ATW is a dual-band GSM/DCS/PCS GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier. The circuit is specifically designed to operate at 3.6 V battery supply voltage. FEATURES • Operates at 3.6 V battery supply voltage • Power Amplifier (PA) output

Integrated Circuit 7-Channel Darlington Array/Driver

Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub strate. All units have open–collector outputs and integral diodes for inductive load transie

CK98 100/133 MHz spread spectrum system clock generator

DESCRIPTION The PCK2014A is a clock generator (frequency synthesizer) chip for a Pentium III and other similar processors. The PCK2014A has six CPU clock outputs at 2.5 V, two 3V66 clocks running at 66 MHz. there are six PCI clock outputs running at 33 MHz. Additionally, the part has three 2.5 V

CK98 100/133 MHz spread spectrum system clock generator

DESCRIPTION The PCK2014A is a clock generator (frequency synthesizer) chip for a Pentium III and other similar processors. The PCK2014A has six CPU clock outputs at 2.5 V, two 3V66 clocks running at 66 MHz. there are six PCI clock outputs running at 33 MHz. Additionally, the part has three 2.5 V

VIDEO SWITCH

DESCRIPTION This integrated circuit provides all video switching allowing connections between the peri TV plug and video sections in the TV set. The TEA2014A is supplied in a DIP8. .1 VIDEO OUTPUT 75Ω- 1VPP NOT SWITCHED .1 SWITCHED VIDEO OUTPUT 2VPP .VIDEO CROSSTALK : 50dB TYPICAL