Silicon NPN Power Transistors

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RF & MICROWAVE TRANSISTORS 1.65 GHz SATCOM APPLICATIONS

DESCRIPTION The SD1897 is a 28 V Class C silicon NPN transistor designed for INMARSAT and other 1.65 GHz SATCOM applications. A gold metallized emitter ballasted die geometry is employed providing high gain and efficiency while ensuring long term re liability and ruggedness under severe oper

Customer Specification

Construction Diameters (In) 1) Component 1 2 X 1 COND a) Conductor 18 (16/30) AWG Tinned Copper 0.047 b) Insulation 0.016 Wall, Nom. PVC 0.079 (1) Color Code Alpha Wire Color Code D Cond Color Cond Color Cond Color 1 BLACK 2 RED 2) Cable Assembly 2 Components Cabled a) Twists: 5.3 Twists/

LOW-VOLTAGE, HIGH-SENSITIVITY HALL EFFECT LATCH SWITCH

Features  Latch Operation  High Sensitivity: Bop and Brp of ±7 Gauss and ±18 Gauss  Open-Drain Output  2.4V to 5.5V Operating Voltage Range  Chopper Stabilized Design Provides  Superior Temperature Stability  Minimal Switch Point Drift  Enhanced Immunity to Stress  Good RF Noise

HIGH SENSITIVITY MICROPOWER OMNIPLOAR HALL-EFFECT SWITCH

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In the past few years, many consumer products have been provided

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