PUSHBUTTON SWITCHES - ILLUMINATED

文件：721.07 Kbytes Page：7 Pages

Silicon NPN Epitaxial

Application Lowfrequencyhighvoltageamplifiercomplementarypairwith2SB1109and2SB1110

NPN SILICON TRANSISTORS

DESCRIPTION The2SD1616/2SD1616AaredesignedforuseindriverandoutputstagesofAFamplifier,generalpurposeapplication.

NPN EPITAXIAL SILICON TRANSISTOR

NPNEPITAXIALSILICONTRANSISTOR DESCRIPTION *Audiofrequencypoweramplifier *Mediumspeedswitching

High-Precision Digital Thermometer and Thermostat

DESCRIPTION TheDS1631,DS1631A,andDS1731digitalthermometersprovide9,10,11,or12-bittemperaturereadingsovera-55°Cto+125°Crange.TheDS1631andDS1631Athermometeraccuracyis±0.5°Cfrom0°Cto+70°Cwith3.0V≤VDD≤5.5V,andtheDS1731accuracyis±1°Cfrom-10°Cto+85°Cwi

1/8- to 1/16-DUTY FIPTM VFD CONTROLLER/DRIVER

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

Horizontal Deflection Output

SiliconNPNTriple-DiffusedJunctionMesaType HorizontalDeflectionOutput Features ●Dampperdiodebuilt-in ●Highbreakdownvoltageandhighreliabilitybyglasspassivation ●Highspeedswitching ●Wideareaofsafetyoperation(ASO) ●FullPackpackageforsimplifiedmountingonahe

Switching Diode Array

FEATURES •8DiodeArray •Standard16pinDual-In-LinePackage •UL94V-0FlammabilityClassification MECHANICAL •Molded16PinDip •Weight:1.026grams(approximate) •Marking:Logo,devicenumber,datecode •Pin#1definedbyDOTontopofpackage

Switching Diode Array

FEATURES •8DiodeArray •Standard16pinDual-In-LinePackage •UL94V-0FlammabilityClassification MECHANICAL •Molded16PinDip •Weight:1.026grams(approximate) •Marking:Logo,devicenumber,datecode •Pin#1definedbyDOTontopofpackage

EPITAXIAL PLANAR NPN SILICON DARLINGTON TRANSISTOR

EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE)

COLOR TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS(WITH DAMPER DIODE)

ColorTVHorizontalDeflectionOutputApplications(withDamperDiode)

NPN TRIPLE DIFFUSED(COLOR TV HORIZONTAL OUTPUT)

COLORTVHORIZONTALOUTPUTAPPLICATIONS(DamperDiodeBUILTIN) ●HighCollector-BaseVoltage(VCBO=1500V) ●HighSpeedSwitching

Silicon NPN Power Transistors

DESCRIPTION •WithTO-3PMLpackage •Built-indamperdiode •Highbreakdownvoltage •Highspeedswitching APPLICATIONS •ForcolorTVhorizontaloutputapplications

Silicon NPN Power Transistors

DESCRIPTION •WithTO-3PMLpackage •Built-indamperdiode •Highbreakdownvoltage •Highspeedswitching APPLICATIONS •ForcolorTVhorizontaloutputapplications

Color TV Horizontal Deflection Output Applications

ColorTVHorizontalDeflectionOutputApplications Features •Highspeed. •Highbreakdownvoltage(VCBO=1500V). •Highreliability(AdoptionofHVPprocess). •AdoptionofMBITprocess. •On-chipdamperdiode.

Silicon NPN Power Transistors

DESCRIPTION •WithTO-3PMLpackage •Built-indamperdiode •Highbreakdownvoltage •Highspeedswitching APPLICATIONS •ForcolorTVhorizontaloutputapplications

Color TV Horizontal Deflection Output Applications

ColorTVHorizontalDeflectionOutputApplications Features •Highspeed. •Highbreakdownvoltage(VCBO=1500V). •Highreliability(AdoptionofHVPprocess). •AdoptionofMBITprocess. •On-chipdamperdiode.

Configurable UART with FIFO ver 2.08

OVERVIEW TheD16550isasoftCoreofaUniversalAsynchronousReceiver/Transmitter(UART)functionallyidenticaltotheTL16C550A.TheD16550allowsserialtransmissionintwomodes:UARTmodeandFIFOmode.InFIFOmodeinternalFIFOsareactivatedallowing16bytes(plus3bitsoferrordatap

Medium Power Transistor (32V, 1A)

MediumPowerTransistor(32V,1A) Features 1)LowVCE(sat)=0.15V(Typ.) (lC/lB=500mA/50mA) 2)Compliments2SB1132/2SB1237

Low voltage fast-switching NPN power transistor

Description ThedeviceismanufacturedinNPNPlanarTechnologybyusinga“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Verylowcollectortoemittersaturation volatage ■Highcurrentgainchara

SiC Silicon Carbide Diode

1Description ThinQ!™Generation5representsInfineonleadingedgetechnologyfortheSiC SchottkyBarrierdiodes.TheInfineonproprietarydiffusionsolderingprocess, alreadyintroducedwithG3isnowcombinedwithanew,morecompactdesignand thin-wafertechnology.Theresultisanewfa

5t h Generation thinQ!TM 650V SiC Schottky Diode

1Description ThinQ!™Generation5representsInfineonleadingedgetechnologyfortheSiC SchottkyBarrierdiodes.TheInfineonproprietarydiffusionsolderingprocess, alreadyintroducedwithG3isnowcombinedwithanew,morecompactdesignand thin-wafertechnology.Theresultisanewfa

50V/5A Switching Applications

Applications 1.Relaydrivers,high-speedinverters,andothergeneralhigh-currentswitchingapplications.

MONOLITHIC H BRIDGE DRIVER CIRCUIT

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

50V/2.5A High-Speed Switching Applications

50V/2.5AHigh-SpeedSwitchingApplications Features •AdoptionofFBETandMBITprocesses. •Lowsaturationvoltage. •LargecurrentcapacityandwideASO. Applications •Powersupplies,relaydrivers,lampdrivers.

Intel 875P Chipset DDR400 SDRAM (PC3200) Memory and Intel Pentium 4 Processors (800 MHz FSB)

Chipset: Intel®875P PerformanceAcceleratorTechnology(PAT) Processors: Intel®Pentium®4Processors, mPGA478with 800/533MHzFSB SupportforHyper-Threading Technology PSCFMB1.5 Memory: DDR400SDRAM(PC3200) DDR333SDRAM(PC2700) ProductFeatures:

Intel 875P Chipset DDR400 SDRAM (PC3200) Memory and Intel Pentium 4 Processors (800 MHz FSB)

Chipset: Intel®875P PerformanceAcceleratorTechnology(PAT) Processors: Intel®Pentium®4Processors, mPGA478with 800/533MHzFSB SupportforHyper-Threading Technology PSCFMB1.5 Memory: DDR400SDRAM(PC3200) DDR333SDRAM(PC2700) ProductFeatures:

Intel 875P Chipset DDR400 SDRAM (PC3200) Memory and Intel Pentium 4 Processors (800 MHz FSB)

Chipset: Intel®875P PerformanceAcceleratorTechnology(PAT) Processors: Intel®Pentium®4Processors, mPGA478with 800/533MHzFSB SupportforHyper-Threading Technology PSCFMB1.5 Memory: DDR400SDRAM(PC3200) DDR333SDRAM(PC2700) ProductFeatures:

Intel 875P Chipset DDR400 SDRAM (PC3200) Memory and Intel Pentium 4 Processors (800 MHz FSB)

Chipset: Intel®875P PerformanceAcceleratorTechnology(PAT) Processors: Intel®Pentium®4Processors, mPGA478with 800/533MHzFSB SupportforHyper-Threading Technology PSCFMB1.5 Memory: DDR400SDRAM(PC3200) DDR333SDRAM(PC2700) ProductFeatures:

DISPLAY SIMPLES 0.56”, 7 SEGMENTOS, EMISSÃO VERMELHA ULTRA BRIGHT, CATODO COMUM - D168K

Aplicaçõestípicas: -Equipamentosdeáudio; -Painéisdecomunicação; -Painéisdeequipamentos; -Sinalizaçãodeadvertência; -Painéisindicadoresemgeral.

N - CHANNEL 100V - 0.07 ohm - 16A DPAK STripFET POWER MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique”SingleFeatureSize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearem

Low power dissipation

文件：329.21 Kbytes Page：1 Pages

Standard Recovery Diodes

文件：683.48 Kbytes Page：5 Pages

Wide current range

文件：225.3 Kbytes Page：5 Pages

Standard Recovery Diodes

文件：683.48 Kbytes Page：5 Pages

Standard Recovery Diodes

文件：683.48 Kbytes Page：5 Pages

Standard Recovery Diodes

文件：683.48 Kbytes Page：5 Pages

Standard Recovery Diodes

文件：683.48 Kbytes Page：5 Pages

Standard Recovery Diodes

文件：683.48 Kbytes Page：5 Pages

Standard Recovery Diodes

文件：683.48 Kbytes Page：5 Pages

Full blocking capability 50/60Hz over a wide temperature range

文件：303.02 Kbytes Page：8 Pages

Control/Communicators

文件：45.7 Kbytes Page：8 Pages

Standard Recovery Diodes (Stud and Flat Base Type)

文件：107.96 Kbytes Page：2 Pages

Standard Recovery Diodes (Stud and Flat Base Type)

文件：107.96 Kbytes Page：2 Pages

Standard Recovery Diodes (Stud and Flat Base Type)

文件：108.69 Kbytes Page：2 Pages

Standard Recovery Diodes (Stud and Flat Base Type)

文件：108.69 Kbytes Page：2 Pages

Standard Recovery Diodes (Stud and Flat Base Type)

文件：108.73 Kbytes Page：2 Pages

Standard Recovery Diodes (Stud and Flat Base Type)

文件：108.73 Kbytes Page：2 Pages

Standard Recovery Diodes (Stud and Flat Base Type)

文件：108.58 Kbytes Page：2 Pages

Standard Recovery Diodes (Stud and Flat Base Type)

文件：108.58 Kbytes Page：2 Pages

包装：散装 描述：HEATSHRINK 1/4\ 电缆，电线 - 管理 热缩管

NPN EPITAXIAL SILICON TRANSISTOR

文件：66.6 Kbytes Page：4 Pages

NPN EPITAXIAL SILICON TRANSISTOR

文件：184.47 Kbytes Page：4 Pages

16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

文件：1.25556 Mbytes Page：57 Pages

16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

文件：1.2335 Mbytes Page：57 Pages

16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

文件：1.25556 Mbytes Page：57 Pages

16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

文件：1.2335 Mbytes Page：57 Pages

16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

文件：1.25556 Mbytes Page：57 Pages

16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

文件：1.2335 Mbytes Page：57 Pages

16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

文件：1.25556 Mbytes Page：57 Pages