isc Silicon NPN Darlington Power Transistor

DESCRIPTION · Collector-Emitter Saturation Voltage-: VCE(sat)= 1.5V(Max) @IC= 3A · High DC Current Gain : hFE= 2000(Min) @ IC= 3A · Complement to Type 2SB1099 APPLICATIONS · Designed for audio frequency power amplifier and low speed switching industrial use.

Optical Reflective Sensors

Description The HBCC-15XX series sensors are fully integrated modules designed for applications requiring optical reflective sensing. The modules contain a 655 nm (or 820 nm) LED emitter and a photodiode. A bifurcated aspheric lens is used to image the active areas of the emitter and detector to

VARIABLE CAPACITANCE DIODE

DESCRIPTION The KV1590NT variable capacitance diode was specially developed for use as tuning elements in car radios, radio cassettes, and other consumer radios. Single package construction includes an antenna and oscillating tuning element. The KV1590NT is available in a TO92-3 package. FEATUR

Dual Serial 12-Bit Multiplying DAC

文件：288.66 Kbytes Page：12 Pages

Dual Serial 12-Bit Multiplying DAC

文件：288.66 Kbytes Page：12 Pages

Dual Serial 12-Bit Multiplying DAC

文件：288.66 Kbytes Page：12 Pages