Silicon Diffused Power Transistor(GENERAL DESCRIPTION)

GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily for use in horizontal deflection circuites of colour television receivers

Low Voltage Reference

A precision band–gap voltage reference designed for critical instrumentation and D/A converter applications. This unit is designed to work with D/A converters, up to 12 bits in accuracy, or as a reference for power supply applications. • Output Voltage: 2.5 V ±
25 mV • Input Voltage Range: 4.5 V

PRECISION LOW VOLTAGE REFERENCE

A precision band−gap voltage reference designed for critical instrumentation and D/A converter applications. This unit is designed to work with D/A converters, up to 12 bits in accuracy, or as a reference for power supply applications. • Output Voltage: 2.5 V 25 mV • Input Voltage Range: 4.5 V t

PRECISION LOW VOLTAGE REFERENCE

A precision band−gap voltage reference designed for critical instrumentation and D/A converter applications. This unit is designed to work with D/A converters, up to 12 bits in accuracy, or as a reference for power supply applications. • Output Voltage: 2.5 V 25 mV • Input Voltage Range: 4.5 V t

LOW NOISE GaAs FET?

DESCRIPTION The MGF1403B is a low-noise GaAs FET with an N-channel Schottky gate, which is designed for use in S to Ku band amplifiers and oscillators. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits. FEATUR

FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE

FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE