18-bit Static Shift Register

4-bit Full Adder

4-bitFullAdder TheHD14008B4-bitfulladderconsistsoffourfulladderswithfastinternallook-aheadcarryoutput.Itisusefulinbinaryadditionandotherarithmeticapplications.

Silicon Diffused Power Transistor(GENERAL DESCRIPTION)

GENERALDESCRIPTION Highvoltage,high-speedswitchingnpntransistorsinaplasticenvelopewithintegratedefficiencydiode,primarilyforuseinhorizontaldeflectioncircuitesofcolourtelevisionreceivers

PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT)

POWERAMPLIFIERVERTICALDEFLECTIONOUTPUT ●Complementto2SB1016

SILICON NPN TRIPLE DIFFUSED TYPE

POWERAMPLIFIERAPPLICATIONS.

Silicon NPN Power Transistors

DESCRIPTION •WithTO-220Fapackage •HighDCcurrentgain •DARLINGTON APPLICATIONS •Igniterapplications •Highvolitageswitchingapplications

NPN TRIPLE DIFFUSED TYPE (IGNITER, HIGH VOLTAGE SWITCHING APPLICATIONS)

IGNITERAPPLICATIONS. HIGHVOLTAGESWITCHINGAPPLICATIONS

isc Silicon NPN Darlington Power Transistor

DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=250V(Min) •Collector-EmitterSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=4A •HighDCCurrentGain:hFE=2000(Min)@IC=2A,VCE=2V APPLICATIONS •Igniterapplications •Highvoltageswitchingapplications

Silicon NPN Power Transistors

SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220Fapackage ·HighDCcurrentgain ·Lowsaturationvoltage ·Complementtotype2SB1023 ·DARLINGTON APPLICATIONS ·Poweramplifierandswitchingapplications ·Hammerdrive,pulsemotordriveapplications

PolySwitch짰 PTC Devices

PolySwitch™ResettableDeviceShortFormCatalog PolySwitchResettableDeviceBenefits: •Reducedwarrantyandservicecosts •Increasedreliability •Superiorshockandvibrationwithstand •Widevarietyofapplications Features: •Remotelyresettable •Testable •Solid-state •Variety

NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)

High-PowerSwitchingApplications HammerDrive,PulseMotorDriveApplications •HighDCcurrentgain:hFE=2000(min)(VCE=3V,IC=3A) •Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=3A)

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)

High-PowerSwitchingApplications HammerDrive,PulseMotorDriveApplications •HighDCcurrentgain:hFE=2000(min)(VCE=3V,IC=3A) •Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=3A)

Airfast RF Power GaN Transistor

This27dBmRFpowerGaNtransistorisdesignedforcellularbasestation applicationscoveringthefrequencyrangeof2496to2690MHz. Features •Highterminalimpedancesforoptimalbroadbandperformance •Designedforlowcomplexitylinearizationsystems •Universalbroadbanddriver •

Airfast RF Power GaN Transistor

Features •Highterminalimpedancesforoptimalbroadbandperformance •Designedforlowcomplexitylinearizationsystems •Universalbroadbanddriver •OptimizedformassiveMIMOactiveantennasystemsfor5Gbasestations

HORIZONTAL DEFLECTION POWER TRANSISTOR

5AMPEREPOWERTRANSISTORS1500VOLTS80WATTS

Silicon Diffused Power Transistor(GENERAL DESCRIPTION)

GENERALDESCRIPTION Highvoltage,high-speedswitchingnpntransistorsinaplasticenvelopewithintegratedefficiencydiode,primarilyforuseinhorizontaldeflectioncircuitesofcolourtelevisionreceivers

NPN SILICON TRANSISTOR

13002transistorchipmanual █Introductiontothechip Chipsize:4inches(100mm) Chipcode:D142AG-00 Chipthickness:240±20µm Diesize:1420×1420µm2 Weldingpositionsize:Bpole300×245µm2,Epole350×245µm2 Electrodemetal:aluminum Backmetal:silverorgold

Technische Information

Features ·Speciallydesignedforoerationwithsmall snubber ·140°Cmaximumjunctiontemperature ·Lowlosses,softrecovery·Electroactivepassivationbya-C:H

Airfast RF Power GaN Transistor

ThisRFpowerGaNtransistorisdesignedforcellularbasestation applicationscoveringthefrequencyrangeof3300to4300MHz. Features •Highterminalimpedancesforoptimalbroadbandperformance •Designedforlowcomplexityanalogordigitallinearizationsystems •Universalbroadband

Airfast RF Power GaN Transistor

ThisRFpowerGaNtransistorisdesignedforcellularbasestation applicationscoveringthefrequencyrangeof3300to4300MHz. Features •Highterminalimpedancesforoptimalbroadbandperformance •Designedforlowcomplexitylinearizationsystems •Universalbroadbanddriver •Optimiz

Airfast RF Power GaN Transistor

This27dBmRFpowerGaNtransistorisdesignedforcellularbasestation applicationscoveringthefrequencyrangeof3300to3800MHz. Features •Highterminalimpedancesforoptimalbroadbandperformance •Designedforlowcomplexitylinearizationsystems •Universalbroadbanddriver •

Rectifier Diode

RectifierDiode

Full blocking capability 50/60Hz over a wide temperature range

KeyParameters   VRRM6800V   IFAVM1590A(TC=100°C)   IFSM3570A(T28000AC=55°C)   VT00,75V   rT0,42mΩ   RthJC14K/kW   ClampingForce15…36kN   Max.Diameter76mm   ContactDiameter50mm   Height26mm Features •Fullblockingcapability50/60Hzoverawide

Complementary pair with 2SB1055

SiNPNTripleDiffusedPlanar HighPowerAmplifier Complementarypairwith2SB1055 Features ●ExceptionallygoodlinearityofhFE ●Wideareaofsafeoperation(ASO) ●HighfT ●FullPackpackageforsimplifiedmountingonlyubyascrew,requiresnoinsulator.

PolySwitch짰 PTC Devices

PolySwitchResettableDevices Radial-leadedDevices Features •Broadestrangeofradial-leadedresettabledevicesavailableintheindustry •Currentratingsfrom50mAto15A •Voltageratingsfrom6V(computerandelectronicapplications)to265VAClinevoltageapplications •Agencyrecogni

14V UNI-DIRECTIONAL TVS DIODE

Features LowProfilePackage(0.53mmMax)andUltra-SmallPCB FootprintArea(1.08mm*0.68mmMax)SuitableforCompact PortableElectronics ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV 1ChannelofESDProtection LowChannelInputCapacitance Tota

14V UNI-DIRECTIONAL TVS DIODE

Features LowProfilePackage(0.53mmMax)andUltra-SmallPCB FootprintArea(1.08mm*0.68mmMax)SuitableforCompact PortableElectronics ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV 1ChannelofESDProtection LowChannelInputCapacitance Tota

STANDARD RECOVERY DIODE

文件：3.93135 Mbytes Page：3 Pages

Standard Recovery Diodes

文件：224.57 Kbytes Page：5 Pages

Silicon NPN Power Transistors

文件：136.73 Kbytes Page：3 Pages

Label format - Old format order code cross reference

文件：3.00256 Mbytes Page：48 Pages

Silicon NPN Power Transistors

文件：143.68 Kbytes Page：4 Pages

Technical Product Specification

文件：2.05794 Mbytes Page：94 Pages

Technical Product Specification

文件：669.52 Kbytes Page：92 Pages

RF Power GaN Transistor

文件：364.45 Kbytes Page：8 Pages

Silicon NPN Power Transistors

文件：118.81 Kbytes Page：3 Pages

Label format - Old format order code cross reference

文件：3.00256 Mbytes Page：48 Pages

Silicon NPN Power Transistors

文件：130.53 Kbytes Page：3 Pages

NON-INSULATED MALE TAB

文件：67.9 Kbytes Page：1 Pages

NON-INSULATED MALE TAB

文件：67.9 Kbytes Page：1 Pages

包装：卷带（TR） 描述：CONN QC TAB 14-16AWG 0.145 CRIMP 连接器，互连器件 快速连接，快速断开连接器

Silicon NPN Power Transistors

文件：131.17 Kbytes Page：3 Pages

High-Power Switching Applications

文件：162.2 Kbytes Page：5 Pages

Silicon NPN Power Transistors

文件：213.89 Kbytes Page：3 Pages

NON-INSULATED FEMALE DISCONNECT, SLEEVED BARREL (.188 SERIES)

文件：69.37 Kbytes Page：1 Pages

NON-INSULATED FEMALE DISCONNECT, SLEEVED BARREL (.188 SERIES)

文件：69.37 Kbytes Page：1 Pages

包装：散装 描述：CONN QC RCPT 14-16AWG 0.187 连接器，互连器件 快速连接，快速断开连接器

NON-INSULATED FEMALE DISCONNECT, SLEEVED BARREL (.188 SERIES)

文件：69.37 Kbytes Page：1 Pages

NON-INSULATED FEMALE DISCONNECT, SLEEVED BARREL (.188 SERIES)

文件：69.37 Kbytes Page：1 Pages

NON-INSULATED FEMALE DISCONNECT, BUTTED SEAM

文件：51.21 Kbytes Page：1 Pages

NON-INSULATED FEMALE DISCONNECT, BUTTED SEAM

文件：51.21 Kbytes Page：1 Pages

NON-INSULATED FEMALE DISCONNECT, SLEEVED BARREL (.188 SERIES)

文件：69.37 Kbytes Page：1 Pages

NON-INSULATED FEMALE DISCONNECT, SLEEVED BARREL (.188 SERIES)

文件：69.37 Kbytes Page：1 Pages

DIODE NETWORKS D SERIES

文件：483.41 Kbytes Page：4 Pages

NON-INSULATED, SLEEVED BARREL FEMALE DISCONNECT (.250 SERIES)

文件：572.31 Kbytes Page：1 Pages

NON-INSULATED MALE DISCONNECT .250 X .032 (6.35 X 0.8)

文件：46 Kbytes Page：1 Pages

NON-INSULATED FEMALE DISCONNECT(BUTTED SEAM)

文件：47.75 Kbytes Page：1 Pages

NON-INSULATED MALE DISCONNECT .250 X .032 (6.35 X 0.8)

文件：46 Kbytes Page：1 Pages

NON-INSULATED FEMALE DISCONNECT(BUTTED SEAM)

文件：47.75 Kbytes Page：1 Pages

NON-INSULATED, SLEEVED BARREL FEMALE DISCONNECT (.250 SERIES)

文件：572.31 Kbytes Page：1 Pages