Silicon NPN epitaxial planer type(For low-voltage output amplification)

Features . Low collector-emiiter saturation voltage Vce(sat) . Low ON resistance Ron . High forward current transfer ratio hfe

时钟控制器电路

D1302是一块高性能、低功耗并附带RAM的涓流充电实时时钟电路。 ·实时时钟可提供秒、分、小时、星期、日期、月份、和年等计时数据，到2100年止。一个月小于31天时可自动调整，且具有闰年补偿功能\n·31X8位通用暂存RAM\n·采用SPI三线接口与CPU进行同步通信\n·电源电压2.0~5.5V均可工作\n·带有备用电源，可对其进行涓流充电\n·主备用电源会自动切换供电\n·2.0V时工作电流小于300nA\n·读写时钟或RAM数据时有单字节模式或\n·多字节模式（脉冲模式）两种数据传送方式\n·;

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS MJL1302A -->PNP MJL3281A -->NPN • The MJL3281A and MJL1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gai

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS MJL1302A -->PNP MJL3281A -->NPN • The MJL3281A and MJL1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gai

TMOS POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mohm

This advanced high cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplie

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS

Complementary NPN-PNP Silicon Power Bipolar Transistor The MJ3281A and MJ1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gain Complementary: — Gain Linearity from 100 mA to 7 A — Hi

MEDIUM POWER AMPLIFIER GaAs MMIC

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