Environmental rated frequency amplification bipolar transistor

Outline\n3DD13001S are NPN bipolar power transistor, manufacturing. The main technology used are: high technology plane, triple expansion Powder technology, multi-layer surface passivation technology, and took emitting region branch Structure design.Product ◆ high pressure\n◆ High current capacity\n◆ high switching speed\n◆ High Reliability\n◆ Environmental (RoHS) Product\n\nThe main purpose\n◆ energy-saving lamps\n◆ Electronic Ballast\n◆ high-frequency switching power supply\n◆ high-frequency power conversion\n◆ General power amplifier circuit;

HMJE13001

Description The HMJE13001 is a medium power transistor designed for use in switching applications. Features • High breakdown voltage • Low collector saturation voltage • Fast switching speed

3 SINGLE DIGIT NUMBERIC DISPLAYS

SEVEN SEGMENT NUMERIC DISPLAY Ultra high brightness red GaAlAs 3 inch Character Height High Contrast Wide Viewing Angle Common Anode - MU13001A Common Cathode - MU13001C

3 SINGLE DIGIT NUMBERIC DISPLAYS

SEVEN SEGMENT NUMERIC DISPLAY Ultra high brightness red GaAlAs 3 inch Character Height High Contrast Wide Viewing Angle Common Anode - MU13001A Common Cathode - MU13001C

High Voltage NPN Transistor

BVCEO = 400V BVCBO = 500V Ic = 0.1A VCE (SAT), = 0.5V @ Ic / Ib = 50mA / 10mA Features ◇ High voltage. ◇ High speed switching Structure ◇ Silicon triple diffused type. ◇ NPN silicon transistor

FULL COLOR LED LAMP FOR OUTDOOR USE

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