1600VDC Isolated 1W Double Output SIP-Package

Features RoHS compliant Efficiency up to 80 1.6kVDC Isolation Wide temperature performance at full 1 Watt load,-40℃ to 85℃ Double isolated output Industry standard required Low ripple & noise

1600VDC Isolated 2W Double Output SIP-Package

Features RoHS compliant Efficiency up to 83 1.6kVDC Isolation Wide temperature performance at full 2 Watt load,-40℃ to 85℃ Double isolated output Industry standard required Low ripple & noise

UNREGULATED TWIN OUTPUT DC-DC CONVERTER

文件：319.92 Kbytes Page：3 Pages

1-2W系列(SIP/DIP)DC-DC模块电源

TWIN OUTPUT DC-DC CONVERTER

文件：143.11 Kbytes Page：2 Pages

TWIN OUTPUT DC-DC CONVERTER

文件：143.11 Kbytes Page：2 Pages

2W, FIXED INPUT, ISOLATED & UNREGULATED TWIN OUTPUT ULTRAMINIATURE SMD PACKAGE DC-DC CONVERTER

文件：582.24 Kbytes Page：4 Pages

1W,FIXEDINPUT, ISOLATED & UNREGULATEDTWIN OUTPUT ULTRAMINIATURESMD PACKAGE DC-DC CONVERTER

文件：557.91 Kbytes Page：3 Pages

定压输入非稳压输出S/DIP(0.25-3W)

1-2W系列(SIP/DIP)DC-DC模块电源

TWIN OUTPUT DC-DC CONVERTER

文件：248.33 Kbytes Page：2 Pages

1W, FIXED INPUT, ISOLATED & UNREGULATED TWIN OUTPUT ULTRAMINIATURE SMD PACKAGE DC-DC CONVERTER

文件：292.63 Kbytes Page：3 Pages

TWIN OUTPUT ULTRAMINIATURE SMD PACKAGE

文件：119.99 Kbytes Page：2 Pages

TWIN OUTPUT ULTRAMINIATURE SMD PACKAGE

文件：121.18 Kbytes Page：2 Pages

1KV Isolated 1W unregulated single dual separated output DIP8 DC?껪C Converter

文件：378.55 Kbytes Page：3 Pages

RF Power GaN Transistors

METAL GATE RF SILICON FET

文件：16.29 Kbytes Page：2 Pages

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all freewheel mode

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all freewheel mode

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For switching/digital circuits ■ Features • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half.