OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Simple bias circuits\n• Low noise\n• High gain - 10 dB minimum;

METAL GATE RF SILICON FET

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Integrated Circuit Preamp w/ALC

Description: The NTE1210 is a low–noise, high–gain preamplifier with a built–in ALC (automatic level control) circuit in a 9–Lead SIP type package designed for use as a record/playback preamp in cassette tape recorders. Features: • Wide ALC Range • Wide Range of Working Power Supply

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half.

12-Bit, uP Compatible, Double-Buffered D to A Converters

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12-Bit, uP Compatible, Double-Buffered D to A Converters

文件：361.79 Kbytes Page：18 Pages

Clock For 1/2 Duty VFD

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