METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 50W – 28V – 1GHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 7.5 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 400 MHz to

Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Very low C(rss)\n• Simple bias cicuits\n• Low noise\n• High gain - 7.5 dB minimum;

NPN SILICON POWER (SWITCHING) TRANSISTOR

Description This medium power NPN transistor, offered in the SOT89 package provides high current and low saturation voltage making it ideal for use in various driving and power management applications. Features • Extremely low equivalent on-resistance; RCE(sat) = 7.8m
Ω at 4.5A • 3 Amps cont

DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS

SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS PARTMARKING DETAIL - T1053

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEO=75V * 3 Amp Continuous Current * 10 Amp Pulse Current * Very Low Saturation Voltage APPLICATIONS * Automotive Switching Circuits * DC-DC Convertors

Fault-tolerant CAN transceiver

文件：113.09 Kbytes Page：20 Pages

Fault-tolerant CAN transceiver

文件：113.09 Kbytes Page：20 Pages