Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Simple bias cicuits\n• Low noise\n• High gain - 16 dB minimum;

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W - 28V - 175MHz SINGLE ENDED

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Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYL1025 series is supplied in the SOD59 (TO220AC) conventional leaded package. FEATURES • Low forward volt drop • Fast switching • Reverse sur

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYL1025B series is supplied in the SOT404 surface mounting package. FEATURES • Low forward volt drop • Fast switching • Reverse

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Schottky rectifier diodes in a surface mounting plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR1025D series is supplied in the SOT428 surface mounting package. FEATURES • Low forward volt d

P-channel enhancement mode MOS transistor

DESCRIPTION P-channel enhancement mode MOS transistor in an 8-pin SOT96-1 (SO8) SMD plastic package. FEATURES • Very low RDSon at low threshold • High-speed switching • No secondary breakdown • Direct interface to C-MOS, TTL, etc. APPLICATIONS • Power management • DC-DC converters • Gene

Data amplifier and laser supply circuit for CD audio and video optical systems ADALASLC

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