METAL GATE RF SILICON FET

FEATURES • EXTRA LOW Crss • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 400 MHz

D COMPACT ENCLOSED SWITCH

Features •High precision and long life. •Suitable for applications demanding higher mechanical strength, •Gasket diaphragm seal provides high environmental resistance.

丝印代码：D1020C5；CoolSiC™ Schottky diode 2000 V G5

Features • VRRM = 2000 V • IF = 10 A • VF = 1.5 V • No reverse recovery current / no forward recovery • High surge current capability • Temperature independent switching behavior • Low forward voltage even at high operating temperature • Tight forward voltage distribution • Specified dv/d

Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Extra low C(rss)\n• Simple bias cicuits\n• Low noise\n• High gain - 10 dB minimum;

METAL GATE RF SILICON FET

FEATURES • EXTRA LOW Crss • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 400 MHz

Power MOSFET

ISOLATION SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 10.0 Ampere)

VOLTAGE- 20 to 100 Volts CURRENT - 10.0 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge,

10-Bit, 12-Bit Binary Multiplying D/A Converter

文件：264.99 Kbytes Page：14 Pages

10-Bit, 12-Bit Binary Multiplying D/A Converter

文件：264.99 Kbytes Page：14 Pages

10-Bit, 12-Bit Binary Multiplying D/A Converter

文件：264.99 Kbytes Page：14 Pages

10-Bit, 12-Bit Binary Multiplying D/A Converter

文件：264.99 Kbytes Page：14 Pages