METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to

Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Simple bias cicuits\n• Low noise\n• High gain - 13 dB minimum;

GSM900/1800/1900 SPDT TX/RX Switch

Description The CXG1028ATN is a high power SPDT switch suitable for Digital Cellular applications. This device is part of a growing family of MMIC Antenna switches for digital cellular and cordless radios. It uses the state-of-the-art Sony GaAs JFET process. Features • Positive voltage

3.3V LVDS 1-Bit High Speed Differential Driver

General Description This single driver is designed for high speed interconnects utilizing Low Voltage Differential Signaling (LVDS) technology. The driver translates LVTTL signal levels to LVDS levels with a typical differential output swing of 350 mV which provides low EMI at ultra low power dis

Power Amplifier Applications

Power Amplifier Applications • Complement to KSD1408

Low-voltage frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1017M BICMOS device integrates prescalers, a programmable divider, and phase comparator to implement a phase-locked loop. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. The synthesizer operates a