METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 500MHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • USEFUL PO AT 1GHz • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 1 MHz to 1 GH

Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Very low C(rss)\n• Useful P(o) at 1 GHz\n• Low noise\n• High gain - 13 dB minimum;

FOR OPTICAL INFORMATION SYSTEMS

DESCRIPTION ML1XX6 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 658-nm and standard CW light output of 30mW. ML1XX6 has a window-mirror-facet which improves the maximum output power. That leads to highly relia

Integrated Circuit AF Small-Signal Amplifier for Tape Recorder

Integrated Circuit AF Small–Signal Amplifier for Tape Recorder

Recording/playback and 2 W audio power amplifier

GENERAL DESCRIPTION The TDA1016 is a monolithic integrated audio power amplifier, preamplifier and A.L.C. circuit designed for applications in radio-recorders and recorders. The wide supply voltage range makes this circuit very suitable for d.c. and a.c. apparatus. The circuit incorporates the fo

16A SCRs

DESCRIPTION The TYN / TN16 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities.

.050 NPN Phototransistors

PRODUCT DESCRIPTION A large area high sensitivity NPN silicon phototransistor in a flat lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments. The base connection is brought out allowing conventional transistor biasing. These devices