METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 400MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • USEFUL PO AT 1GHz • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 400

Gold metallised multi-purpose silicon DMOS RF FET

Low-power frequency synthesizer for mobile radio communications

GENERAL DESCRIPTION The UMA1014 is a low-power universal synthesizer which has been designed for use in channelized radio communication. The IC is manufactured in bipolar technology and is designed to operate at 5 to 100 kHz channel spacing with an RF input from 50 to 1100 MHz. The channel is p

Low-power frequency synthesizer for mobile radio communications

GENERAL DESCRIPTION The UMA1014 is a low-power universal synthesizer which has been designed for use in channelized radio communication. The IC is manufactured in bipolar technology and is designed to operate at 5 to 100 kHz channel spacing with an RF input from 50 to 1100 MHz. The channel is p

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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QUAD PRECISION OPERATIONAL AMPLIFIERS

文件：631.06 Kbytes Page：30 Pages

QUAD PRECISION OPERATIONAL AMPLIFIERS

文件：631.06 Kbytes Page：30 Pages