Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Very low C(rss)\n• Simple bias circuits\n• Low noise\n• High gain - 13 dB minimum;

METAL GATE RF SILICON FET

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TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology. The combination of very low on-state resistance and low switching losses make this device the optimum choice in high speed computer motherboard

2 to 6 W audio power amplifier

The TDA1011 is a monolithic integrated audio amplifier circuit in a 9-lead single in-line (SIL) plastic package. The device is especially designed for portable radio and recorder applications and delivers up to 4 W in a 4 Ω load impedance. The device can deliver up to 6 W into 4 Ω at 16 V loaded s

Constant Voltage and Constant Current Controller for Battery Chargers and Adapters

DESCRIPTION The TSM1011 is a highly integrated solution for SMPS applications requiring CV (constant voltage) and CC (constant current) modes. The TSM1011 integrates one voltage reference and two operational amplifiers (with ORed outputs —common collectors). The voltage reference combined with

Constant Voltage and Constant Current Controller for Battery Chargers and Adapters

DESCRIPTION The TSM1011 is a highly integrated solution for SMPS applications requiring CV (constant voltage) and CC (constant current) modes. The TSM1011 integrates one voltage reference and two operational amplifiers (with ORed outputs —common collectors). The voltage reference combined with

Constant Voltage and Constant Current Controller for Battery Chargers and Adapters

DESCRIPTION The TSM1011 is a highly integrated solution for SMPS applications requiring CV (constant voltage) and CC (constant current) modes. The TSM1011 integrates one voltage reference and two operational amplifiers (with ORed outputs —common collectors). The voltage reference combined with