位置:FM24CL64B_13 > FM24CL64B_13详情

FM24CL64B_13中文资料

厂家型号

FM24CL64B_13

文件大小

342.47Kbytes

页面数量

13

功能描述

64Kb Serial 3V F-RAM Memory

数据手册

下载地址一下载地址二到原厂下载

简称

CYPRESS赛普拉斯

生产厂商

Cypress Semiconductor

中文名称

赛普拉斯半导体公司官网

FM24CL64B_13数据手册规格书PDF详情

Description

The FM24CL64B is a 64Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.

The FM24CL64B performs write operations at bus speed. No write delays are incurred. The next bus cycle may commence immediately without the need for data polling. In addition, the product offers write endurance orders of magnitude higher than EEPROM. Also, F-RAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits.

These capabilities make the FM24CL64B ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system.

The FM24CL64B provides substantial benefits to users of serial EEPROM, yet these benefits are available in a hardware drop-in replacement. The device is available in industry standard 8-pin SOIC package using a familiar two-wire (I2C) protocol. The device is guaranteed over the automotive temperature range of -40°C to +125°C.

Features

64K bit Ferroelectric Nonvolatile RAM

● Organized as 8192 x 8 bits

● High Endurance 10 Trillion (10¹³) Read/Writes

● NoDelay™ Writes

● Advanced High-Reliability Ferroelectric Process

Fast Two-wire Serial Interface

● Up to 1 MHz maximum bus frequency

● Direct hardware replacement for EEPROM

● Supports legacy timing for 100 kHz & 400 kHz

Low Power Consumption

● Low Voltage Operation 3.0-3.6V

● 6 μA Standby Current (+85°C)

Industry Standard Configuration

● Automotive Temperature -40°C to +125°C

o Qualified to AEC Q100 Specification

● 8-pin “Green”/RoHS SOIC Package

更新时间:2025-10-27 19:56:00
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