Description

The FM24C64B is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A

ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.

Features

64K bit Ferroelectric Nonvolatile RAM

Organized as 8,192 x 8 bits

High Endurance 1 Trillion (1012) Read/Writes

38 Year Data Retention

NoDelay™ Writes

Advanced High-Reliability Ferroelectric Process

Fast Two-wire Serial Interface

Up to 1 MHz maximum bus frequency

Direct hardware replacement for EEPROM

Supports legacy timing for 100 kHz & 400 kHz

Low Power Operation

5V operation

100 µA Active Current (100 kHz)

4 µA (typ.) Standby Current

Industry Standard Configuration

Industrial Temperature -40 C to +85 C

8-pin “Green”/RoHS SOIC (-G)