Description

The FM24C04B is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.

Features

4K bit Ferroelectric Nonvolatile RAM

• Organized as 512 x 8 bits

• High Endurance 1012 Read/Writes

• 38 Year Data Retention

• NoDelay™ Writes

• Advanced High-Reliability Ferroelectric Process

Fast Two-wire Serial Interface

• Up to 1 MHz maximum bus frequency

• Direct hardware replacement for EEPROM

• Supports legacy timing for 100 kHz & 400 kHz

Low Power Operation

• 5V operation

• 100 µA Active Current (100 kHz)

• 4 µA (typ.) Standby Current

Industry Standard Configuration

• Industrial Temperature -40° C to +85° C

• 8-pin “Green”/RoHS SOIC (-G)