Features

• High-density 8-/16-megabit SRAM modules

• High-speed CMOS SRAMs

—Access time of 70 ns

• Low active power

—605 mW (max.), 2M x 8

• Double-sided SMD technology

• TTL-compatible inputs and outputs

• Small footprint SIP

—PCB layout area of 0.72 sq. in.

• 2V data retention (L version)