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CY7C25632KV18-550BZC中文资料
CY7C25632KV18-550BZC数据手册规格书PDF详情
Functional Description
The CY7C25632KV18 and CY7C25652KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR II+ architecture has separate data inputs and data outputs to completely eliminate the need to “turn-around” the data bus that exists with common I/O devices. Each port is accessed through a common address bus. Addresses for read and write addresses are latched on alternate rising edges of the input (K) clock.
Features
■ Separate independent read and write data ports
❐ Supports concurrent transactions
■ 550 MHz clock for high bandwidth
■ Four-word burst for reducing address bus frequency
■ Double data rate (DDR) interfaces on both read and write ports (data transferred at 1100 MHz) at 550 MHz
■ Available in 2.5 clock cycle latency
■ Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only
■ Echo clocks (CQ and CQ) simplify data capture in high-speed systems
■ Data valid pin (QVLD) to indicate valid data on the output
■ On-die termination (ODT) feature
❐ Supported for D[x:0], BWS[x:0], and K/K inputs
■ Single multiplexed address input bus latches address inputs for read and write ports
■ Separate port selects for depth expansion
■ Synchronous internally self-timed writes
■ QDR® II+ operates with 2.5 cycle read latency when DOFF is asserted HIGH
■ Operates similar to QDR I device with 1 cycle read latency when DOFF is asserted LOW
■ Available in × 18, and × 36 configurations
■ Full data coherency, providing most current data
■ Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to VDD [1]
❐ Supports both 1.5 V and 1.8 V I/O supply
■ HSTL inputs and variable drive HSTL output buffers
■ Available in 165-ball FBGA package (13 × 15 × 1.4 mm)
■ Offered in both Pb-free and non Pb-free packages
■ JTAG 1149.1 compatible test access port
■ Phase-locked loop (PLL) for accurate data placement
CY7C25632KV18-550BZC产品属性
- 类型
描述
- 型号
CY7C25632KV18-550BZC
- 功能描述
静态随机存取存储器 72MB(4Mx18) 1.8v 550MHz QDR II 静态随机存取存储器
- RoHS
否
- 制造商
Cypress Semiconductor
- 存储容量
16 Mbit
- 组织
1 M x 16
- 访问时间
55 ns
- 电源电压-最大
3.6 V
- 电源电压-最小
2.2 V
- 最大工作电流
22 uA
- 最大工作温度
+ 85 C
- 最小工作温度
- 40 C
- 安装风格
SMD/SMT
- 封装/箱体
TSOP-48
- 封装
Tray
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
CYPRESS |
24+ |
FBGA |
23000 |
免费送样原盒原包现货一手渠道联系 |
|||
Cypress |
165-FBGA |
4600 |
Cypress一级分销,原装原盒原包装! |
||||
Cypress |
2017+ |
BGA |
9652 |
只做进口原装正品现货,或订货,假一赔十! |
|||
CYPRESS |
23+ |
NA |
1200 |
专业电子元器件供应链正迈科技特价代理QQ1304306553 |
|||
CYPRESS |
20+ |
BGA-165 |
36 |
就找我吧!--邀您体验愉快问购元件! |
|||
CYPRESS |
22+ |
BGA |
8000 |
原装正品支持实单 |
|||
Cypress |
23+ |
BGA |
8560 |
受权代理!全新原装现货特价热卖! |
|||
CYPRESS |
23+ |
BGA |
7000 |
||||
CYPRESS |
21+ |
FBGA |
453 |
原装现货假一赔十 |
|||
CYPRESS |
22+ |
BGA |
4436 |
原装现货 |
CY7C25632KV18-550BZC 价格
参考价格:¥2075.2186
CY7C25632KV18-550BZC 资料下载更多...
CY7C25632KV18-550BZC 芯片相关型号
- 01306.15.01
- 01310.15T.01
- 01312.41.01
- 01513.70.01
- 01812
- 07611337
- 07611438
- 284TAAS103B26BT
- 284TBAF103B26BT
- BR262W30A103E1G
- CGJ2H2X7R1H010JTXXXX
- CGJ3E1X7R1C101J
- CGJ3F2X7R1H010JTXXXX
- CGJ5H4C0G1C101J
- CY7C1328G-133AXI
- CY7C1351G_12
- CY7C25652KV18-500BZXI
- CY7C25652KV18-550BZC
- EMS22D51-M16-WS4
- EMS22D53-M28-WS4
- EMS22Q33-D25-WS3
- ISL329XE
- ISL848XE
- MAFA1014-SC1-03-S-2
- MAFA1020-S21-00-E-2
- MAFA1023-SC1-03-S-2
- NZ9F9V1ST5G
- SCH1333_12
- SD05T1_12
- Y-CONC-R422S-MB8A-2000-A
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CypressSemiconductor 赛普拉斯半导体公司
Cypress Semiconductor是一家总部位于美国加州圣克拉拉的半导体公司,现为Infineon Technologies旗下一部分。该公司成立于1982年,是一家专业从事半导体解决方案开发的公司。 Cypress Semiconductor主要致力于提供广泛的半导体产品,包括微控制器、存储器、时钟和数据传输产品、接口解决方案、模拟和混合信号产品等。这些产品被广泛应于消费电子、通信、工业、汽车等领域。 公司在技术创新和产品研发方面具有领先地位,致力于提供性能卓越、高质量的解决方案。除了产品之外,Cypress Semiconductor还提供技术支持、方案定制和全方位的服务,以满足客