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CY7C2163KV18中文资料
CY7C2163KV18数据手册规格书PDF详情
Functional Description
The CY7C2163KV18, and CY7C2165KV18 are 1.8 V synchronous pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR II+ architecture has separate data inputs and data outputs to completely eliminate the need to ‘turnaround’ the data bus that exists with common I/O devices.
Features
■ Separate independent read and write data ports
❐ Supports concurrent transactions
■ 550-MHz clock for high bandwidth
■ Four-word burst for reducing address bus frequency
■ Double data rate (DDR) interfaces on both read and write ports (data transferred at 1100 MHz) at 550 MHz
■ Available in 2.5 clock cycle latency
■ Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only
■ Echo clocks (CQ and CQ) simplify data capture in high-speed systems
■ Data valid pin (QVLD) to indicate valid data on the output
■ On-die termination (ODT) feature
❐ Supported for D[x:0], BWS[x:0], and K/K inputs
■ Single multiplexed address input bus latches address inputs
for read and write ports
■ Separate port selects for depth expansion
■ Synchronous internally self-timed writes
■ QDR® II+ operates with 2.5 cycle read latency when DOFF is asserted HIGH
■ Operates similar to QDR I device with one cycle read latency when DOFF is asserted LOW
■ Available in × 18, and × 36 configurations
■ Full data coherency, providing most current data
■ Core VDD = 1.8 V± 0.1 V; I/O VDDQ = 1.4 V to VDD [1]
❐ Supports both 1.5 V and 1.8 V I/O supply
■ HSTL inputs and variable drive HSTL output buffers
■ Available in 165-ball FBGA package (13 × 15 × 1.4 mm)
■ CY7C2163KV18 offered in Pb-free packages and CY7C2165KV18 offered in non Pb-free packages
■ JTAG 1149.1 compatible test access port
■ Phase-locked loop (PLL) for accurate data placement
CY7C2163KV18产品属性
- 类型
描述
- 型号
CY7C2163KV18
- 功能描述
静态随机存取存储器 18MB(1Mx18) 1.8v 450MHz DDR II 静态随机存取存储器
- RoHS
否
- 制造商
Cypress Semiconductor
- 存储容量
16 Mbit
- 组织
1 M x 16
- 访问时间
55 ns
- 电源电压-最大
3.6 V
- 电源电压-最小
2.2 V
- 最大工作电流
22 uA
- 最大工作温度
+ 85 C
- 最小工作温度
- 40 C
- 安装风格
SMD/SMT
- 封装/箱体
TSOP-48
- 封装
Tray
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Cypress |
165-FBGA |
5000 |
Cypress一级分销,原装原盒原包装! |
||||
CYPRESS |
23+ |
NA |
1221 |
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品 |
|||
CYPRESS |
ROHS+Original |
NA |
1221 |
专业电子元器件供应链/QQ 350053121 /正纳电子 |
|||
CYPRESS |
24+ |
BGA |
35210 |
原装现货/放心购买 |
|||
CYPRESS |
25+ |
BGA-165 |
1001 |
就找我吧!--邀您体验愉快问购元件! |
|||
Cypress |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
CYPRESS |
25+23+ |
BGA |
23462 |
绝对原装全新正品现货/优势渠道商、原盘原包原盒 |
|||
Cypress |
22+ |
165FBGA (13x15) |
9000 |
原厂渠道,现货配单 |
|||
CYPRESS |
23+ |
BGA |
1110 |
专注配单,只做原装进口现货 |
|||
CYPRESS |
23+ |
BGA |
7000 |
CY7C2163KV18-450BZXI 价格
参考价格:¥247.7648
CY7C2163KV18 资料下载更多...
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CYPRESS相关芯片制造商
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