位置:CY7C1424KV18 > CY7C1424KV18详情

CY7C1424KV18中文资料

厂家型号

CY7C1424KV18

文件大小

944Kbytes

页面数量

32

功能描述

36-Mbit DDR II SIO SRAM 2-Word Burst Architecture

静态随机存取存储器 36MB(1Mx36) 1.8v 250MHz DDR II 静态随机存取存储器

数据手册

原厂下载下载地址一下载地址二到原厂下载

简称

CYPRESS赛普拉斯

生产厂商

Cypress Semiconductor

中文名称

赛普拉斯半导体公司官网

CY7C1424KV18数据手册规格书PDF详情

Functional Description

The CY7C1422KV18, CY7C1429KV18, CY7C1423KV18, and CY7C1424KV18 are 1.8 V synchronous pipelined SRAMs, equipped with DDR II SIO (double data rate separate I/O) architecture. The DDR II SIO consists of two separate ports: the read port and the write port to access the memory array. The read port has data outputs to support read operations and the write port has data inputs to support write operations. The DDR II SIO has separate data inputs and data outputs to completely eliminate the need to “turnaround” the data bus required with common I/O devices.

Features

■ 36 Mbit density (4 M × 8, 4 M × 9, 2 M × 18, 1 M × 36)

■ 333 MHz clock for high bandwidth

■ 2-word burst for reducing address bus frequency

■ Double data rate (DDR) interfaces (data transferred at 666 MHz) at 333 MHz

■ Two input clocks (K and K) for precise DDR timing

❐ SRAM uses rising edges only

■ Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches

■ Echo clocks (CQ and CQ) simplify data capture in high speed systems

■ Synchronous internally self timed writes

■ DDR II operates with 1.5 cycle read latency when DOFF is asserted HIGH

■ Operates similar to DDR I device with 1 cycle read latency when DOFF is asserted LOW

■ 1.8 V core power supply with HSTL inputs and outputs

■ Variable drive HSTL output buffers

■ Expanded HSTL output voltage (1.4 V to VDD)

❐ Supports both 1.5 V and 1.8 V IO supply

■ Available in 165-ball FBGA package (13 × 15 × 1.4 mm)

■ Offered in both Pb-free and non Pb-free packages

■ JTAG 1149.1 compatible test access port

■ Phase locked loop (PLL) for accurate data placement

CY7C1424KV18产品属性

  • 类型

    描述

  • 型号

    CY7C1424KV18

  • 功能描述

    静态随机存取存储器 36MB(1Mx36) 1.8v 250MHz DDR II 静态随机存取存储器

  • RoHS

  • 制造商

    Cypress Semiconductor

  • 存储容量

    16 Mbit

  • 组织

    1 M x 16

  • 访问时间

    55 ns

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.2 V

  • 最大工作电流

    22 uA

  • 最大工作温度

    + 85 C

  • 最小工作温度

    - 40 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    TSOP-48

  • 封装

    Tray

更新时间:2025-10-22 17:58:00
供应商 型号 品牌 批号 封装 库存 备注 价格
CYPRESS
ROHS+Original
NA
1221
专业电子元器件供应链/QQ 350053121 /正纳电子
CYPRESS
25+
BGA-165
1000
就找我吧!--邀您体验愉快问购元件!
Cypress
22+
165FBGA (13x15)
9000
原厂渠道,现货配单
Cypress
23+
165-FBGA(13x15)
73390
专业分销产品!原装正品!价格优势!
CYPRESS
23+
NA
1221
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品
Cypress
25+
电联咨询
7800
公司现货,提供拆样技术支持
Cypress(赛普拉斯)
25+
165-LBGA
500000
源自原厂成本,高价回收工厂呆滞
CYPRESS/赛普拉斯
23+
BGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
CYPRESS(赛普拉斯)
24+
LBGA165
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
Cypress Semiconductor Corp
23+
165-FBGA13x15
7300
专注配单,只做原装进口现货