位置:CY7C1311CV18-200BZC > CY7C1311CV18-200BZC详情

CY7C1311CV18-200BZC中文资料

厂家型号

CY7C1311CV18-200BZC

文件大小

695.1Kbytes

页面数量

31

功能描述

18-Mbit QDR??II SRAM 4-Word Burst Architecture

静态随机存取存储器 2Mx8 1.8V QDR II 静态随机存取存储器

数据手册

原厂下载下载地址一下载地址二到原厂下载

简称

CYPRESS赛普拉斯

生产厂商

Cypress Semiconductor

中文名称

赛普拉斯半导体公司官网

CY7C1311CV18-200BZC数据手册规格书PDF详情

Functional Description

The CY7C1311CV18, CY7C1911CV18, CY7C1313CV18, and CY7C1315CV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR™-II architecture. QDR-II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations.

Features

■ Separate independent read and write data ports

❐ Supports concurrent transactions

■ 300 MHz clock for high bandwidth

■ 4-word burst for reducing address bus frequency

■ Double Data Rate (DDR) interfaces on both read and write ports

(data transferred at 600 MHz) at 300 MHz

■ Two input clocks (K and K) for precise DDR timing

❐ SRAM uses rising edges only

■ Two input clocks for output data (C and C) to minimize clock

skew and flight time mismatches

■ Echo clocks (CQ and CQ) simplify data capture in high-speed

systems

■ Single multiplexed address input bus latches address inputs

for both read and write ports

■ Separate port selects for depth expansion

■ Synchronous internally self-timed writes

■ QDR™-II operates with 1.5 cycle read latency when the Delay

Lock Loop (DLL) is enabled

■ Operates as a QDR-I device with 1 cycle read latency in DLL

off mode

■ Available in x 8, x 9, x 18, and x 36 configurations

■ Full data coherency, providing most current data

■ Core VDD = 1.8 (±0.1V); IO VDDQ = 1.4V to VDD

■ Available in 165-Ball FBGA package (13 x 15 x 1.4 mm)

■ Offered in both Pb-free and non Pb-free packages

■ Variable drive HSTL output buffers

■ JTAG 1149.1 compatible test access port

■ Delay Lock Loop (DLL) for accurate data placement

CY7C1311CV18-200BZC产品属性

  • 类型

    描述

  • 型号

    CY7C1311CV18-200BZC

  • 功能描述

    静态随机存取存储器 2Mx8 1.8V QDR II 静态随机存取存储器

  • RoHS

  • 制造商

    Cypress Semiconductor

  • 存储容量

    16 Mbit

  • 组织

    1 M x 16

  • 访问时间

    55 ns

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.2 V

  • 最大工作电流

    22 uA

  • 最大工作温度

    + 85 C

  • 最小工作温度

    - 40 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    TSOP-48

  • 封装

    Tray

更新时间:2025-10-7 16:20:00
供应商 型号 品牌 批号 封装 库存 备注 价格
Cypress
165-FBGA
1520
Cypress一级分销,原装原盒原包装!
CYPRESS
25+
BGA-165
1001
就找我吧!--邀您体验愉快问购元件!
CYPRESS
2138+
原厂标准封装
8960
代理CYPRESS全系列芯片,原装现货
Cypress
25+
电联咨询
7800
公司现货,提供拆样技术支持
Cypress Semiconductor Corp
23+
165-FBGA13x15
7300
专注配单,只做原装进口现货
Cypress Semiconductor Corp
21+
256-LBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
Cypress Semiconductor Corp
24+
165-FBGA(13x15)
56200
一级代理/放心采购
Cypress
22+
165FBGA (13x15)
9000
原厂渠道,现货配单
Cypress
23+
165FBGA (13x15)
9000
原装正品,支持实单
CYPRESS(赛普拉斯)
24+
LBGA165
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!