General Description：

CS120N06 C8, the silicon N-channel Enhanced

VDMOSFETs, is obtained by advanced Trench Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is

TO-220AB, which accords with the RoHS standard.

Features：

l Fast Switching

l Low ON Resistance(Rdson≤6.5mΩ)

l Low Gate Charge

l Low Reverse transfer capacitances(Typical:217pF)

l 100% Single Pulse avalanche energy Test