The CP736V-2N5401 die is a PNP silicon transistor designed for high voltage amplifi er applications.

MECHANICAL SPECIFICATIONS:

Die Size 17.3 x 17.3 MILS

Die Thickness 7.1 MILS

Base Bonding Pad Size 3.9 x 3.9 MILS

Emitter Bonding Pad Size 3.9 x 3.9 MILS

Top Side Metalization Al-Si - 17,000Å

Back Side Metalization Au - 9,000Å

Scribe Alley Width 1.8 MILS

Wafer Diameter 5 INCHES

Gross Die Per Wafer 57,735