DESCRIPTION

The NE5820M53 is a P-channel silicon MOSFET designed for use as impedance converter for microphone.

The package is a 3-pin thin-type lead-less minimold, suitable for high-density surface mounting.

FEATURES

• Low noise : NV = −114 dBV TYP. @VDD = 2.0 V, Cin = 3 pF, RL = 15 kΩ

• Low input capacitance : Ciss = 1.5 pF TYP. @VDD = 2.0 V, RL = 15 kΩ

• Low consumption current : IDD = 85 μATYP. @VDD = 2.0 V, RL = 15 kΩ

• High-density surface mounting : 3-pin thin-type lead-less minimold (1.2 × 1.0 × 0.33 mm)

• Built-in the capacitor for RF noise immunity

• High ESD voltage

APPLICATIONS

• Microphone, Sensor etc.